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Effect of surface roughness on the adhesion properties of Cu/Cr films on polyimide substrate treated by inductively coupled oxygen plasma

Surface & coatings technology, 2005-12, Vol.200 (7), p.2072-2079

2005

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Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors

Organic electronics, 2012-11, Vol.13 (11), p.2401-2405

2012

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Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

Thin solid films, 2012-10, Vol.521, p.83-88

2012

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Enhancement of flexural stress and reduction of surface roughness through changes in gas concentrations during high-speed chemical dry thinning of silicon wafers

Thin solid films, 2013-11, Vol.547, p.173-177

2013

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Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Applied physics letters, 2011-04, Vol.98 (14), p.142113-142113-3

2011

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Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5476-5479

2008

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Deep dry etching of borosilicate glass using SF6 and SF6/Ar inductively coupled plasmas

Microelectronic engineering, 2005-10, Vol.82 (2), p.119-128

2005

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Massage therapy for breast cancer patients: a systematic review

Annals of oncology, 2011-06, Vol.22 (6), p.1459-1461

2011

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An effective passive microfluidic mixer utilizing chaotic advection

Sensors and actuators. B, Chemical, 2008-05, Vol.132 (1), p.172-181

2008

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Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

Organic electronics, 2011-11, Vol.12 (11), p.1815-1821

2011

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Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors

Applied physics letters, 2008-07, Vol.93 (1), p.013305-013305-3

2008

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Adhesion properties of Cu/Cr films on polyimide substrate treated by dielectric barrier discharge plasma

Surface & coatings technology, 2005-04, Vol.193 (1), p.101-106

2005

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Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

Current Applied Physics, 2014, 14(5), , pp.738-743

2014

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Fast release process of metal structure using chemical dry etching of sacrificial Si layer

Thin solid films, 2011-08, Vol.519 (20), p.6769-6772

2011

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Improved electrical stability in cyclically bent organic thin film transistors with nanocomposite gate dielectrics and surface passivation

Applied physics letters, 2009-09, Vol.95 (11), p.113302-113302-3

2009

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Polymer thin film transistor with electroplated source and drain electrodes on a flexible substrate

Thin solid films, 2006-10, Vol.515 (2), p.805-809

2006

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Effects of different electroplated gate electrodes on electrical performances of flexible organic thin film transistor and flexibility improvement

Organic electronics, 2007-10, Vol.8 (5), p.513-521

2007

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Effect of additive N 2 and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning

Microelectronics and reliability, 2012-02, Vol.52 (2), p.412-417

2012

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Gap-filling of Cu–Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

Materials research bulletin, 2012-10, Vol.47 (10), p.2961-2965

2012

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Improvement of mechanical and electrical stabilities of flexible organic thin film transistor by using adhesive organic interlayer

Organic electronics, 2008-06, Vol.9 (3), p.413-417

2008

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The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH2F2/N2/Ar capacitively coupled plasmas

Thin solid films, 2011-08, Vol.519 (20), p.6741-6745

2011

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Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

Microelectronic engineering, 2006-02, Vol.83 (2), p.328-335

2006

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Conformal electroless filling of Cu into patterned amorphous carbon layer modified by oxygen plasma and aminosilane treatments

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-07, Vol.28 (4), p.715-719

2010

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Effect of additive N2 and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning

Microelectronics and reliability, 2012-02, Vol.52 (2), p.412-417

2012

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Physical properties and etching characteristics of metal (Al, Ag, Li) doped ZnO films grown by RF magnetron sputtering

Thin solid films, 2008-08, Vol.516 (19), p.6598-6603

2008

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