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IZO/ITO Double-Layered Transparent Conductive Oxide for Silicon Heterojunction Solar Cells

IEEE access, 2022, Vol.10, p.77170-77175

2022

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Low-Power Consumption IGZO Memristor-Based Gas Sensor Embedded in an Internet of Things Monitoring System for Isopropanol Alcohol Gas

Micromachines (Basel), 2023-12, Vol.15 (1), p.77

2023

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High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature

Journal of the Korean Physical Society, 2022, 80(11), , pp.1065-1070

2022

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Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1665

2023

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MTraceCheck: Validating non-deterministic behavior of memory consistency models in post-silicon validation

2017 ACM/IEEE 44th Annual International Symposium on Computer Architecture (ISCA), 2017, p.201-213

2017

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Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

IEEE access, 2022, Vol.10, p.6622-6628

2022

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Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

IEEE access, 2022, Vol.10, p.90401-90407

2022

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Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (12), p.1848

2023

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Bypassing Multicore Memory Bugs With Coarse-Grained Reconfigurable Logic

IEEE transactions on computers, 2022-09, Vol.71 (9), p.2191-2204

2022

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Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (9), p.1550

2023

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Improvement in the energy conversion efficiency for silicon heterojunction solar cells due to SiOx inserted with conducting filaments

Journal of alloys and compounds, 2023-01, Vol.932, p.167669, Article 167669

2023

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Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cells

Inorganics, 2023-03, Vol.11 (3), p.106

2023

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High-Intensity Warm-Up Increases Anaerobic Energy Contribution during 100-m Sprint

Biology (Basel, Switzerland), 2021-03, Vol.10 (3), p.198

2021

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Dynamic Response and Swift Recovery of Filament Heater‐Integrated Low‐Power Transparent CNT Gas Sensor

Advanced functional materials, 2024-06

2024

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Corporate Social Responsibility, Corporate Governance and Earnings Quality: Evidence from Korea

Corporate governance : an international review, 2013-09, Vol.21 (5), p.447-467

2013

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Policies and innovations to battle Covid-19 – A case study of South Korea

Health policy and technology, 2020-12, Vol.9 (4), p.587-597

2020

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Effects of Individualized Low-Intensity Exercise and Its Duration on Recovery Ability in Adults

Healthcare (Basel), 2021-03, Vol.9 (3), p.249

2021

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Response characteristic in discontinuous NO gas flows for boron nitride memristor gas sensor devices

Sensors and actuators. B, Chemical, 2024-02, Vol.401, p.135063, Article 135063

2024

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Influence of en-APTAS membrane on NO gas selectivity of HfO 2 -based memristor gas sensors

Japanese Journal of Applied Physics, 2024-01

2024

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Correlation between resistive switching characteristics and density of traps observed in Zr3N2 resistive switching memory devices with TiN barrier electrode

Ceramics international, 2022-07, Vol.48 (14), p.20478-20484

2022

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Probabilistic bug-masking analysis for post-silicon tests in microprocessor verification

2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC), 2016, p.1-6

2016

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Gas detection and recovery characteristics at room temperature observed in a Zr3N4-based memristor sensor array

Sensors and actuators. B, Chemical, 2023-02, Vol.376, p.132993, Article 132993

2023

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NO sensing properties of BN-based memristor sensor array for real-time NO monitoring-systems

Sensors and actuators. B, Chemical, 2023-11, Vol.394, p.134373, Article 134373

2023

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A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

Materials characterization, 2021-12, Vol.182, p.111578, Article 111578

2021

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Enhanced optical and electrical properties of indium tin oxide for solar cell applications via post-microwave treatment

Optical materials, 2024-03, Vol.149, p.115093, Article 115093

2024

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IZO/ITO Double-Layered Transparent Conductive Oxide for Silicon Heterojunction Solar Cells

Low-Power Consumption IGZO Memristor-Based Gas Sensor Embedded in an Internet of Things Monitoring System for Isopropanol Alcohol Gas

High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature

Effect of Hydrogen Annealing on Performances of BN-Based RRAM

MTraceCheck: Validating non-deterministic behavior of memory consistency models in post-silicon validation

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications

Bypassing Multicore Memory Bugs With Coarse-Grained Reconfigurable Logic

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Improvement in the energy conversion efficiency for silicon heterojunction solar cells due to SiOx inserted with conducting filaments

Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cells

High-Intensity Warm-Up Increases Anaerobic Energy Contribution during 100-m Sprint

Dynamic Response and Swift Recovery of Filament Heater‐Integrated Low‐Power Transparent CNT Gas Sensor

Corporate Social Responsibility, Corporate Governance and Earnings Quality: Evidence from Korea

Policies and innovations to battle Covid-19 – A case study of South Korea

Effects of Individualized Low-Intensity Exercise and Its Duration on Recovery Ability in Adults

Response characteristic in discontinuous NO gas flows for boron nitride memristor gas sensor devices

Influence of en-APTAS membrane on NO gas selectivity of HfO 2 -based memristor gas sensors

Correlation between resistive switching characteristics and density of traps observed in Zr3N2 resistive switching memory devices with TiN barrier electrode

Probabilistic bug-masking analysis for post-silicon tests in microprocessor verification

Gas detection and recovery characteristics at room temperature observed in a Zr3N4-based memristor sensor array

NO sensing properties of BN-based memristor sensor array for real-time NO monitoring-systems

A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

Enhanced optical and electrical properties of indium tin oxide for solar cell applications via post-microwave treatment

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