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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472

2002

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A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.124-125+430-431

2002

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A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.162-457 vol.1

2002

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A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.124-431

2002

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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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0.34 [Formula Omitted] AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

IEEE electron device letters, 2015-11, Vol.36 (11), p.1132

2015

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0.34 \text} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

IEEE electron device letters, 2015-11, Vol.36 (11), p.1132-1134

2015

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0349 Robust inter-beat interval estimation algorithm using clustering method

Sleep (New York, N.Y.), 2022-05, Vol.45 (Supplement_1), p.A157-A157

2022

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0444 A Digital Therapy Based on Real-time Sleep Sensing Data

Sleep (New York, N.Y.), 2024-04, Vol.47 (Supplement_1), p.A190-A191

2024

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0521 Validation of Deep Learning Algorithm Model in Automatic Scoring of the Respiratory Events in Adult Polysomnography

Sleep (New York, N.Y.), 2024-04, Vol.47 (Supplement_1), p.A223-A224

2024

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0945 A Robust Hybrid algorithm for automatic respiratory events scoring in adults

Sleep (New York, N.Y.), 2023-05, Vol.46 (Supplement_1), p.A417-A417

2023

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A 1.01-V 8.5-Gb/s/pin 16-Gb LPDDR5x SDRAM With Advanced I/O Circuitry for High-Speed and Low-Power Applications

IEEE journal of solid-state circuits, 2024, p.1-9

2024

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A 1.08ms Ultrafast Scanning Capacitive Touch-Screen Sensor Interface with Charge-Interpolated Common-Mode Compensation and Host-Based Adaptive Median Filtering

2023 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2023, p.1-3

2023

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1,1,1 - 삼염화에탄의 합성공정개발

화학공학, 1976-06, Vol.14 (3), p.169

1976

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A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx

IEEE journal of solid-state circuits, 2020-01, Vol.55 (1), p.167-177

2020

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A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits

IEEE journal of solid-state circuits, 2015-01, Vol.50 (1), p.191-203

2015

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1,200gram 미숙아에서 Type A 식도 폐쇄증의 식도 단단문합술 -1례 보고

Taehan Hyungbu Oekwa Hakhoe chi, 1997, Vol.30 (2), p.236-240

1997

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1.48 μm emission properties and the cross-relaxation mechanism in chalcohalide glass doped with Tm 3

Journal of non-crystalline solids, 2003, Vol.321 (3), p.210-216

2003

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1.48 μm emission properties and the cross-relaxation mechanism in chalcohalide glass doped with Tm3

Journal of non-crystalline solids, 2003-07, Vol.321 (3), p.210-216

2003

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1.5 V ultrawide-band GaAs monolithic amplifier for portable wireless LAN and satellite communication applications

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.163-166

1994

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1.5MVA grid-connected interleaved inverters using coupled inductors for wind power generation system

2013 IEEE Energy Conversion Congress and Exposition, 2013, p.4689-4696

2013

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A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009, p.140-141,141a

2009

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