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Local response estimation of a seagoing vessel using onboard measurement data

Marine structures, 2022-11, Vol.86, p.103298, Article 103298

2022

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Advanced CMOS Devices and Applications

Electronics (Basel), 2024-01, Vol.13 (1), p.134

2024

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High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties

Journal of microelectronic manufacturing, 2020-06, Vol.3 (2)

ChoongHyun Lee

2020

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Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

IEEE electron device letters, 2023-10, Vol.44 (10), p.1780-1783

2023

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Phase Transitions and Anti-Ferroelectric Behaviors in Hf 1-x Zr x O 2 Films

IEEE electron device letters, 2023-10, Vol.44 (10), p.1780-1783

2023

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Chemically surface-engineered polydimethylsiloxane layer via plasma treatment for advancing textile-based triboelectric nanogenerators

Nano energy, 2019-03, Vol.57, p.353-362

2019

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Interface engineering of Si1−xGex gate stacks for high performance dual channel CMOS

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.573-576

2017

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Highly Surface-Embossed Polydimethylsiloxane-Based Triboelectric Nanogenerators with Hierarchically Nanostructured Conductive Ni–Cu Fabrics

ACS applied materials & interfaces, 2018-10, Vol.10 (39), p.33221-33229

2018

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8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio

IEEE electron device letters, 2024-05, Vol.45 (5), p.833-836

2024

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Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering

IEEE electron device letters, 2022-07, Vol.43 (7), p.1057-1060

2022

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Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-6

2023

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2

IEEE electron device letters, 2023-11, Vol.44 (11), p.1833-1836

2023

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Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1671-1675

2023

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO 2

IEEE electron device letters, 2023-11, Vol.44 (11), p.1833-1836

2023

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Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1671-1675

2023

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A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4259-4264

2022

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Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Journal of applied physics, 2024-03, Vol.135 (12)

2024

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A Review of Mechanism and Technology of Hybrid Bonding

Journal of electronic packaging, 2025-03, Vol.147 (1)

2025

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Improvement of Ferroelectricity and Reliability in Hf 0.5 Zr 0.5 O 2 Thin Films With Two-Step Oxygen Vacancy Engineering

IEEE electron device letters, 2022-07, Vol.43 (7), p.1057-1060

2022

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Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electronics (Basel), 2023-05, Vol.12 (11), p.2426

2023

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Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

IEEE electron device letters, 2022-06, Vol.43 (6), p.842-845

2022

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Atomically Flat Germanium (111) Surface by Hydrogen Annealing

ECS transactions, 2013-08, Vol.58 (9), p.201-206

2013

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Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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Ti/HfO[sub.2]-Based RRAM with Superior Thermal Stability Based on Self-Limited TiO[sub.x]

Electronics (Basel), 2023-05, Vol.12 (11)

2023

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Local response estimation of a seagoing vessel using onboard measurement data

Advanced CMOS Devices and Applications

High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf 1-x Zr x O 2 Films

Chemically surface-engineered polydimethylsiloxane layer via plasma treatment for advancing textile-based triboelectric nanogenerators

Interface engineering of Si1−xGex gate stacks for high performance dual channel CMOS

Highly Surface-Embossed Polydimethylsiloxane-Based Triboelectric Nanogenerators with Hierarchically Nanostructured Conductive Ni–Cu Fabrics

8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio

Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering

Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2

Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO 2

Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

A Review of Mechanism and Technology of Hybrid Bonding

Improvement of Ferroelectricity and Reliability in Hf 0.5 Zr 0.5 O 2 Thin Films With Two-Step Oxygen Vacancy Engineering

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

Atomically Flat Germanium (111) Surface by Hydrogen Annealing

Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

Ti/HfO[sub.2]-Based RRAM with Superior Thermal Stability Based on Self-Limited TiO[sub.x]

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