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Effects of the deposition condition on the microstructure and properties of ZnO thin films deposited by metal organic chemical vapor deposition with ultrasonic nebulization

Thin solid films, 2016-04, Vol.605, p.157-162

2016

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Thickness dependence of microstructure and properties of ZnO thin films deposited by metal-organic chemical vapor deposition using ultrasonic nebulization

Thin solid films, 2013-11, Vol.546, p.38-41

2013

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Preparation of Ga-Doped ZnO Thin Films by Metal-Organic Chemical Vapor Deposition with Ultrasonic Nebulization

Journal of nanoscience and nanotechnology, 2016-11, Vol.16 (11), p.11552-11557

2016

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Effects of the Ga-doping concentration on the characteristics of Zn0.7Mg0.3O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization

Journal of electroceramics, 2018-12, Vol.41 (1-4), p.23-27

2018

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Preparation of Zn1−xMgxO Thin Films by Metal-Organic Chemical Vapor Deposition Using Ultrasonic Nebulization

Journal of nanoscience and nanotechnology, 2016-11, Vol.16 (11), p.11353-11358

2016

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Preparation of Barium Titanate Thin Films Made by MOCVD Using Ultrasonic Nebulization

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007, p.94-95

2007

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Preparation of Barium Titanate Thin Films by MOCVD Using Ultrasonic Nebulization

Ferroelectrics, 2010-01, Vol.406 (1), p.130-136

2010

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FERROELECTRIC AND PIEZOELECTRIC PROPERTIES OF Pb(Mg1/3Nb2/3)O3-PbTiO3 THIN FILMS BY MOCVD USING ULTRASONIC NEBULIZATION

Integrated ferroelectrics, 2007-04, Vol.88 (1), p.103-110

2007

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Preparation of zirconia thin films by metalorganic chemical vapor deposition using ultrasonic nebulization

Journal of materials research, 1996-10, Vol.11 (10), p.2583-2587

1996

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EFFECTS OF DEPOSITION PARAMETERS AND FILM THICKNESS ON THE PHASES AND ELECTRICAL PROPERTIES OF Pb(Mg1/3Nb2/3)O3 THIN FILMS MADE BY MOCVD USING ULTRASONIC NEBULIZATION

Integrated ferroelectrics, 2007-04, Vol.88 (1), p.68-75

2007

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CRYSTALLIZATION IN Pb(Zr, Ti)O3/Pt THIN FILMS ON Mg2TiO4 BUFFER LAYER

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 12A, pp. 6716-6719. 2000, 2000-01, Vol.39 (12A), p.6716-6719

2000

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Preparation of BaTiO3 thin films by metalorganic chemical vapor deposition using ultrasonic spraying

Japanese journal of applied physics, 1994, Vol.33 (9B), p.5125-5128

1994

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Phase formation stages of MgTa2O6 and Pb(Mg1/3Ta2/3)O3

Materials letters, 2005, Vol.59 (5), p.588-590

2005

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Preparation of Ga-Doped Zn 1− x Mg x O Thin Films by Metal-Organic Chemical Vapor Deposition Using Ultrasonic Nebulization

Journal of nanoscience and nanotechnology, 2017-10, Vol.17 (10), p.7393-7399

2017

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Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007, p.96-98

2007

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Preparation of Pb(Mg1/3Nb2/3)O3 Thin Films by MOCVD Using Ultrasonic Nebulization

Integrated ferroelectrics, 2004-01, Vol.68 (1), p.45-52

2004

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Effect of Rapid Thermal Annealing on the Properties of Pb(Zr, Ti)O 3 Thin Films Made by Low-Temperature Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2002-11, Vol.41 (Part 1, No. 11B), p.6701-6704

2002

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The Characteristics of Pb(Mg1/3Nb2/3)O3 Films on PbTiO3 and BaTiO3 Seed Layer by MOCVD

Ferroelectrics, 2006-09, Vol.339 (1), p.53-58

2006

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The Characteristics of Magnesium Titanate Thin Film as Buffer Layer by Electron Beam Evaporation

Integrated ferroelectrics, 2003-01, Vol.57 (1), p.1265-1270

2003

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Effect of Zr/Ti Ratio on the Properties of PZT Thin Films Made by MOCVD Using Ultrasonic Nebulization

Integrated ferroelectrics, 2003-01, Vol.52 (1), p.147-154

2003

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The Characteristics of Pb(Mg1/3, Nb2/3)O3-PbTiO3 Thin Films Made by Ultrasonic Spraying MOCVD

Ferroelectrics, 2006-09, Vol.339 (1), p.59-65

2006

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Electrical Properties of PZT/Mg2TiO4 Thin Films Made by Low Pressure MOCVD

Integrated ferroelectrics, 2004-01, Vol.68 (1), p.37-43

2004

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Electrical properties of PZT films and Mg2TiO4 buffer layer for mfmis fet

Ferroelectrics, 2001-01, Vol.260 (1), p.81-86

2001

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Simultaneous measurement of thermally stimulated luminescence and thermally stimulated current of ZnSe single crystal

Journal of physics. D, Applied physics, 1995-09, Vol.28 (9), p.1951-1957

1995

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Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

Journal of crystal growth, 1997-09, Vol.180 (1), p.47-53

1997

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Effects of the deposition condition on the microstructure and properties of ZnO thin films deposited by metal organic chemical vapor deposition with ultrasonic nebulization

Thickness dependence of microstructure and properties of ZnO thin films deposited by metal-organic chemical vapor deposition using ultrasonic nebulization

Preparation of Ga-Doped ZnO Thin Films by Metal-Organic Chemical Vapor Deposition with Ultrasonic Nebulization

Effects of the Ga-doping concentration on the characteristics of Zn0.7Mg0.3O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization

Preparation of Zn1−xMgxO Thin Films by Metal-Organic Chemical Vapor Deposition Using Ultrasonic Nebulization

Preparation of Barium Titanate Thin Films Made by MOCVD Using Ultrasonic Nebulization

Preparation of Barium Titanate Thin Films by MOCVD Using Ultrasonic Nebulization

FERROELECTRIC AND PIEZOELECTRIC PROPERTIES OF Pb(Mg1/3Nb2/3)O3-PbTiO3 THIN FILMS BY MOCVD USING ULTRASONIC NEBULIZATION

Preparation of zirconia thin films by metalorganic chemical vapor deposition using ultrasonic nebulization

EFFECTS OF DEPOSITION PARAMETERS AND FILM THICKNESS ON THE PHASES AND ELECTRICAL PROPERTIES OF Pb(Mg1/3Nb2/3)O3 THIN FILMS MADE BY MOCVD USING ULTRASONIC NEBULIZATION

CRYSTALLIZATION IN Pb(Zr, Ti)O3/Pt THIN FILMS ON Mg2TiO4 BUFFER LAYER

Preparation of BaTiO3 thin films by metalorganic chemical vapor deposition using ultrasonic spraying

Phase formation stages of MgTa2O6 and Pb(Mg1/3Ta2/3)O3

Preparation of Ga-Doped Zn 1− x Mg x O Thin Films by Metal-Organic Chemical Vapor Deposition Using Ultrasonic Nebulization

Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization

Preparation of Pb(Mg1/3Nb2/3)O3 Thin Films by MOCVD Using Ultrasonic Nebulization

Effect of Rapid Thermal Annealing on the Properties of Pb(Zr, Ti)O 3 Thin Films Made by Low-Temperature Metal-Organic Chemical Vapor Deposition

The Characteristics of Pb(Mg1/3Nb2/3)O3 Films on PbTiO3 and BaTiO3 Seed Layer by MOCVD

The Characteristics of Magnesium Titanate Thin Film as Buffer Layer by Electron Beam Evaporation

Effect of Zr/Ti Ratio on the Properties of PZT Thin Films Made by MOCVD Using Ultrasonic Nebulization

The Characteristics of Pb(Mg1/3, Nb2/3)O3-PbTiO3 Thin Films Made by Ultrasonic Spraying MOCVD

Electrical Properties of PZT/Mg2TiO4 Thin Films Made by Low Pressure MOCVD

Electrical properties of PZT films and Mg2TiO4 buffer layer for mfmis fet

Simultaneous measurement of thermally stimulated luminescence and thermally stimulated current of ZnSe single crystal

Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

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