UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 74

Sortiert nach

Comparison of Au catalysts supported on mesoporous titania and silica: investigation of Au particle size effects and metal-support interactions

Catalysis letters, 2004-06, Vol.95 (3-4), p.99-106

2004

Volltextzugriff (PDF)

Activated carbons impregnated with iron oxide nanoparticles for enhanced removal of bisphenol A and natural organic matter

Journal of hazardous materials, 2015-04, Vol.286, p.315-324

2015

Volltextzugriff (PDF)

The methods of identification, analysis, and removal of endocrine disrupting compounds (EDCs) in water

Journal of hazardous materials, 2009-12, Vol.172 (1), p.1-12

2009

Volltextzugriff (PDF)

The relationship between financial constraints and investment efficiency

The Journal of corporate accounting & finance, 2024-06

2024

Volltextzugriff (PDF)

Neural network modeling of inter-characteristics of silicon nitride film deposited by using a plasma-enhanced chemical vapor deposition

Expert systems with applications, 2011-09, Vol.38 (9), p.11437-11441

2011

Volltextzugriff (PDF)

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Current Applied Physics, 2010, 10(3), , pp.971-974

2010

Volltextzugriff (PDF)

Prediction on the seasonal behavior of hydrogen sulfide using a neural network model

TheScientificWorld, 2011-05, Vol.11, p.992-1004

2011

Volltextzugriff (PDF)

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma

Current Applied Physics, 2010, 10(3), , pp.369-371

2010

Volltextzugriff (PDF)

Microtrench of oxynitride thin films in a C2F6 inductively coupled plasma

Applied surface science, 2006-11, Vol.253 (3), p.1464-1468

2006

Volltextzugriff (PDF)

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma

Current applied physics, 2010-05, p.369-371

2010

Volltextzugriff (PDF)

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Current applied physics, 2010-05, p.971-974

2010

Volltextzugriff (PDF)

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH(4)-N(2) plasma at room temperature

Current applied physics, 2010-05, Vol.10 (3), p.971-974

2010

Volltextzugriff (PDF)

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH 4–N 2 plasma at room temperature

Current applied physics, 2010, Vol.10 (3), p.971-974

2010

Volltextzugriff (PDF)

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH 4–NH 3–N 2 pulsed plasma

Current applied physics, 2010, Vol.10 (3), p.S369-S371

2010

Volltextzugriff (PDF)

MODELING OF THIN FILM PROCESS DATA USING A GENETIC ALGORITHM-OPTIMIZED INITIAL WEIGHT OF BACKPROPAGATION NEURAL NETWORK

Applied artificial intelligence, 2009-02, Vol.23 (2), p.168-178

2009

Volltextzugriff (PDF)

Microtrench of oxynitride thin films in a C 2F 6 inductively coupled plasma

Applied surface science, 2006, Vol.253 (3), p.1464-1468

2006

Volltextzugriff (PDF)

Prediction of SiC etching in a NF3∕CH4 plasma using neural network

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2517-2522

2004

Volltextzugriff (PDF)

Use of neural network to model the deposition rate of PECVD-silicon nitride films

Plasma sources science & technology, 2005-02, Vol.14 (1), p.83-88

2005

Volltextzugriff (PDF)

Neural Network Model of Plasma Charging Damage on MOSFET Device

Materials and manufacturing processes, 2009-06, Vol.24 (6), p.615-618

2009

Volltextzugriff (PDF)

Optimization of Wavelet-Filtered In-Situ Plasma Etch Data Using Neural Network and Genetic Algorithm

Materials and manufacturing processes, 2011-04, Vol.26 (3), p.398-402

2011

Volltextzugriff (PDF)

Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH₄–NH₃ plasma

Current applied physics, 2011, Vol.11 (1S), p.S43-S46

2011

Volltextzugriff (PDF)

Use of Neural Network and Genetic Algorithm to Model Scanning Electron Microscopy for Enhanced Image of Material Surfaces

Materials and manufacturing processes, 2011-04, Vol.26 (3), p.382-387

2011

Volltextzugriff (PDF)

Relationships between etch rate and roughness of plasma etched surface

IEEE transactions on plasma science, 2002-10, Vol.30 (5), p.2074-2077

2002

Volltextzugriff (PDF)

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Metals and Materials International, 2010, 16(4), , pp.633-637

2010

Volltextzugriff (PDF)

Temperature effect on deposition rate of silicon nitride films

Applied surface science, 2006-04, Vol.252 (12), p.4138-4145

2006

Volltextzugriff (PDF)

1 – 25 von 74

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(71)
Mit Volltextzugriff
(74)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(43)
Technology
(34)
Physical Sciences
(30)
Physics
(29)
Materials Science
(25)
Physics, Applied
(25)
Plasma Etching
(23)
Engineering
(16)
Materials Science, Multidisciplinary
(16)
Exact Sciences And Technology
(14)
Neural Networks
(14)
Silicon Carbide
(11)
Engineering, Electrical & Electronic
(9)
Materials Science, Coatings & Films
(9)
Etching
(7)
Surface Roughness
(7)
Applied Sciences
(6)
Mathematical Models
(6)
Physics, Condensed Matter
(6)
Science & Technology - Other Topics
(6)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Comparison of Au catalysts supported on mesoporous titania and silica: investigation of Au particle size effects and metal-support interactions

Activated carbons impregnated with iron oxide nanoparticles for enhanced removal of bisphenol A and natural organic matter

The methods of identification, analysis, and removal of endocrine disrupting compounds (EDCs) in water

The relationship between financial constraints and investment efficiency

Neural network modeling of inter-characteristics of silicon nitride film deposited by using a plasma-enhanced chemical vapor deposition

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Prediction on the seasonal behavior of hydrogen sulfide using a neural network model

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma

Microtrench of oxynitride thin films in a C2F6 inductively coupled plasma

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH(4)-N(2) plasma at room temperature

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH 4–N 2 plasma at room temperature

Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH 4–NH 3–N 2 pulsed plasma

MODELING OF THIN FILM PROCESS DATA USING A GENETIC ALGORITHM-OPTIMIZED INITIAL WEIGHT OF BACKPROPAGATION NEURAL NETWORK

Microtrench of oxynitride thin films in a C 2F 6 inductively coupled plasma

Prediction of SiC etching in a NF3∕CH4 plasma using neural network

Use of neural network to model the deposition rate of PECVD-silicon nitride films

Neural Network Model of Plasma Charging Damage on MOSFET Device

Optimization of Wavelet-Filtered In-Situ Plasma Etch Data Using Neural Network and Genetic Algorithm

Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH₄–NH₃ plasma

Use of Neural Network and Genetic Algorithm to Model Scanning Electron Microscopy for Enhanced Image of Material Surfaces

Relationships between etch rate and roughness of plasma etched surface

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Temperature effect on deposition rate of silicon nitride films

Suchergebnisse filtern