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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF

Electronics letters, 2016-04, Vol.52 (8), p.633-635

2016

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Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts

IEEE journal of selected topics in quantum electronics, 2002-09, Vol.8 (5), p.1015-1024

Ledentsov, N.N.

2002

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IEEE_Xplore

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1540-1555

2008

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IEEE_Xplore

High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Proceedings of the IEEE, 2007, Vol.95 (9), p.1741-1756

2007

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IEEE_Xplore

20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1302-1308

2007

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IEEE_Xplore

Quantum-dot heterostructure lasers

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.439-451

2000

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IEEE_Xplore

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.679-686

2009

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IEEE_Xplore

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1113-1122

2008

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IEEE_Xplore

MBE-grown metamorphic lasers for applications at telecom wavelengths

Journal of crystal growth, 2007-04, Vol.301, p.914-922

2007

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On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1265-1267

2004

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IEEE_Xplore

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.901-908

2009

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IEEE_Xplore

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.851-858

2006

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IEEE_Xplore

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

IEEE journal of quantum electronics, 2005-11, Vol.41 (11), p.1341-1348

2005

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IEEE_Xplore

Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots

MRS bulletin, 1998-02, Vol.23 (2), p.31-34

1998

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High-Speed Transmission in Multimode Fibers

Journal of lightwave technology, 2010-02, Vol.28 (4), p.569-586

2010

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IEEE_Xplore

56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s

Electronics letters, 2012-09, Vol.48 (20), p.1292-1294

2012

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High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1415-1417

2004

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IEEE_Xplore

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

Solid-state electronics, 2019-05, Vol.155, p.150-158

2019

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Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

IEEE journal of quantum electronics, 2001-03, Vol.37 (3), p.418-425

2001

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IEEE_Xplore

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Electronics letters, 2009, Vol.45 (10), p.501

2009

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Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide

Electronics letters, 2003-11, Vol.39 (24), p.1729

2003

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Vertical cavity lasers based on vertically coupled quantum dots

Electronics letters, 1997-06, Vol.33 (13), p.1150

1997

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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

IEEE journal of quantum electronics, 2008-08, Vol.44 (8), p.724-731

2008

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IEEE_Xplore

Self-organization processes in MBE-grown quantum dot structures

Thin solid films, 1995-10, Vol.267 (1), p.32-36

1995

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Prevention of gain saturation by multi-layer quantum dot lasers

Electronics letters, 1996-01, Vol.32 (14), p.1302-1304

1996

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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF

Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Quantum-dot heterostructure lasers

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

MBE-grown metamorphic lasers for applications at telecom wavelengths

On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots

High-Speed Transmission in Multimode Fibers

56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s

High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide

Vertical cavity lasers based on vertically coupled quantum dots

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

Self-organization processes in MBE-grown quantum dot structures

Prevention of gain saturation by multi-layer quantum dot lasers

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