UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 61

Sortiert nach

GaPSb : a new ternary material for Schottky diode fabrication on InP

Applied physics letters, 1991-07, Vol.59 (4), p.423-424

1991

Volltextzugriff (PDF)

Schottky and field-effect transistor fabrication on InP and GaInAs

Applied physics letters, 1988-02, Vol.52 (7), p.540-542

1988

Volltextzugriff (PDF)

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Applied physics letters, 1989-11, Vol.55 (20), p.2099-2101

1989

Volltextzugriff (PDF)

Residual defect center in GaInAs/InP films grown by molecular beam epitaxy

Applied physics letters, 1987-10, Vol.51 (17), p.1361-1363

1987

Volltextzugriff (PDF)

GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

Electronics letters, 1987-11, Vol.23 (24), p.1254-1255

1987

Volltextzugriff (PDF)

Schottky diode and field-effect transistor on InP

Applied physics letters, 1989-03, Vol.54 (13), p.1238-1240

1989

Volltextzugriff (PDF)

Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations

Journal of applied physics, 1981-08, Vol.52 (8), p.5090-5097

1981

Volltextzugriff (PDF)

Protection of InP EPI-ready wafers by controlled oxide growth

Journal of electronic materials, 1991-12, Vol.20 (12), p.963-965

1991

Volltextzugriff (PDF)

Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

Applied physics letters, 1987-11, Vol.51 (20), p.1597-1599

1987

Volltextzugriff (PDF)

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.258-260

1993

Volltextzugriff (PDF)

Gettering by ion implantation

Nuclear instruments and methods in physics research, 1983-01, Vol.209, p.325-332

Lecrosnier, D.

1983

Volltextzugriff (PDF)

Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.82-87

1993

Volltextzugriff (PDF)

Critical layer thickness of In0.82Ga0.18As/InP quantum wells

Journal of crystal growth, 1992-05, Vol.120 (1-4), p.353-356

1992

Volltextzugriff (PDF)

X-ray photoelectron diffraction applied to crystallinity studies of III-V surfaces

Physica scripta, 1990-04, Vol.41 (4), p.522-525

1990

Volltextzugriff (PDF)

Development of gate-lag effect on GaAs power MESFETs during aging

Electronics letters, 1987-02, Vol.23 (4), p.139-141

1987

Volltextzugriff (PDF)

Analysis of surface-induced degradation of GaAs power MESFET's

IEEE electron device letters, 1985-04, Vol.6 (4), p.192-194

1985

Volltextzugriff (PDF)

Epitaxial growth on InP substrates etched with methane reactive ion etching technique

Electronics letters, 1989-08, Vol.25 (18), p.1257-1259

1989

Volltextzugriff (PDF)

Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a gsmbe system

Journal of crystal growth, 1990-10, Vol.105 (1-4), p.234-239

1990

Volltextzugriff (PDF)

Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution

Electronics letters, 1985-01, Vol.21 (3), p.115-116

1985

Volltextzugriff (PDF)

Erbium-doped GaAs light-emitting diode at 1.54 μm

Electronics letters, 1988, Vol.24 (15), p.956-958

1988

Volltextzugriff (PDF)

Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment

Journal of applied physics, 1989-09, Vol.66 (6), p.2241-2247

1989

Volltextzugriff (PDF)

GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

Electronics letters, 1987, Vol.23 (24), p.1254

1987

Volltextzugriff (PDF)

Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

IEEE electron device letters, 1990-04, Vol.11 (4), p.153-155

1990

Volltextzugriff (PDF)

Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon

Journal of applied physics, 1980-01, Vol.51 (2), p.1036-1038

1980

Volltextzugriff (PDF)

Thermal generation of carriers in gold-doped silicon

Journal of applied physics, 1980-12, Vol.51 (12), p.6252-6257

1980

Volltextzugriff (PDF)

1 – 25 von 61

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(40)
Mit Volltextzugriff
(48)

Publikationsform

Sprache

Englisch
(61)
Japanisch
(11)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

GaPSb : a new ternary material for Schottky diode fabrication on InP

Schottky and field-effect transistor fabrication on InP and GaInAs

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Residual defect center in GaInAs/InP films grown by molecular beam epitaxy

GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

Schottky diode and field-effect transistor on InP

Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations

Protection of InP EPI-ready wafers by controlled oxide growth

Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

Gettering by ion implantation

Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

Critical layer thickness of In0.82Ga0.18As/InP quantum wells

X-ray photoelectron diffraction applied to crystallinity studies of III-V surfaces

Development of gate-lag effect on GaAs power MESFETs during aging

Analysis of surface-induced degradation of GaAs power MESFET's

Epitaxial growth on InP substrates etched with methane reactive ion etching technique

Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a gsmbe system

Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution

Erbium-doped GaAs light-emitting diode at 1.54 μm

Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment

GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon

Thermal generation of carriers in gold-doped silicon

Suchergebnisse filtern