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Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

IEEE electron device letters, 2015-04, Vol.36 (4), p.303-305

2015

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12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.1457-1460

2018

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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Journal of crystal growth, 2022-09, Vol.593, p.126779, Article 126779

2022

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

IEEE electron device letters, 2013-08, Vol.34 (8), p.978-980

2013

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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Microelectronics and reliability, 2021-11, Vol.126, p.114291, Article 114291

2021

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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3105-3111

2013

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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Solid-state electronics, 2022-02, Vol.188, p.108210, Article 108210

2022

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New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Semiconductor science and technology, 2021-03, Vol.36 (3), p.34002

2021

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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Semiconductor science and technology, 2021-02, Vol.36 (2), p.24001

2021

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10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017, p.1-4

2017

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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

IEEE transactions on electron devices, 2013, Vol.60, p.3105-3111

2013

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6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016, p.1-4

2016

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Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3105-3111

2013

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Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

Materials science forum, 2014-10, Vol.806, p.81-87

2014

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A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier

2020 50th European Microwave Conference (EuMC), 2021, p.792-795

2021

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Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

European physical journal. Applied physics, 2013-11, Vol.64 (2), p.20101

2013

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Maurice Ohana ou la musique de l'énergie

Revue de Musicologie, 2015, Vol.101 (2), p.469-472

Lecourt, François

2015

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Gina Pane: is the teaching of art an ongoing process?

European Journal of Arts Education, 2000-01, Vol.3 (1), p.10-23

2000

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The brain orexin system and almorexant in fear-conditioned startle reactions in the rat

Psychopharmacologia, 2012-10, Vol.223 (4), p.465-475

2012

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Preliminary Results Of Blood Flow Restriction Training - Musculoskeletal Implications For Astronauts And Healthy Aging: 2172

Medicine and science in sports and exercise, 2024-10, Vol.56 (10S), p.788-789

2024

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All-normal dispersion, all-fibered PM laser mode-locked by SESAM

Optics express, 2012-05, Vol.20 (11), p.11918-11923

2012

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Key Role of Alphaproteobacteria and Cyanobacteria in the Formation of Stromatolites of Lake Dziani Dzaha (Mayotte, Western Indian Ocean)

Frontiers in microbiology, 2018-05, Vol.9, p.796-796

2018

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Web-based prediction of antimicrobial resistance in enterococcal clinical isolates by whole-genome sequencing

European journal of clinical microbiology & infectious diseases, 2023, Vol.42 (1), p.67-76

2023

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Inhaled nitric oxide in patients with acute respiratory distress syndrome caused by COVID-19: treatment modalities, clinical response, and outcomes

Annals of intensive care, 2023-06, Vol.13 (1), p.57-57, Article 57

2023

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Le nouveau cadre institutionnel de la négociation collective dans le secteur municipal au Québec : un examen détaillé

Cahiers de droit (Québec), 2021-06, Vol.62 (2), p.405-129

2021

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Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process

Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier

Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

Maurice Ohana ou la musique de l'énergie

Gina Pane: is the teaching of art an ongoing process?

The brain orexin system and almorexant in fear-conditioned startle reactions in the rat

Preliminary Results Of Blood Flow Restriction Training - Musculoskeletal Implications For Astronauts And Healthy Aging: 2172

All-normal dispersion, all-fibered PM laser mode-locked by SESAM

Key Role of Alphaproteobacteria and Cyanobacteria in the Formation of Stromatolites of Lake Dziani Dzaha (Mayotte, Western Indian Ocean)

Web-based prediction of antimicrobial resistance in enterococcal clinical isolates by whole-genome sequencing

Inhaled nitric oxide in patients with acute respiratory distress syndrome caused by COVID-19: treatment modalities, clinical response, and outcomes

Le nouveau cadre institutionnel de la négociation collective dans le secteur municipal au Québec : un examen détaillé

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