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Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

IEEE electron device letters, 2021-08, Vol.42 (8), p.1136-1139

2021

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Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Semiconductor science and technology, 2020-02, Vol.36 (2), p.24002

2020

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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

Journal of applied physics, 2018-01, Vol.123 (3)

2018

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Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

Semiconductor science and technology, 2020-11, Vol.35 (11)

2020

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Solvation Effects on Self-Association and Segregation Processes in tert-Butanol–Aprotic Solvent Binary Mixtures

The journal of physical chemistry. B, 2013-09, Vol.117 (35), p.10221-10230

2013

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Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Journal of physics. Conference series, 2015, Vol.647 (1)

2015

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Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12056

2015

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Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Penser les frontières sociales: Enquêtes sur la culture, l’engagement et la politique

2019

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Impact ionization and band-to-band tunneling in In x Ga 1-x As PIN ungated devices: A Monte Carlo analysis

Journal of applied physics, 2018-01, Vol.123 (3)

2018

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Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process

Journal of applied physics, 2018-11, Vol.124 (17)

2018

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Comprehensive characterization of Gunn oscillations in In 0.53 Ga 0.47 As planar diodes

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115009

2020

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Solvation Effects on Self-Association and Segregation Processes in tert -Butanol–Aprotic Solvent Binary Mixtures

The journal of physical chemistry. B, 2013-08, Vol.117 (35), p.10221-10230

2013

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Improvement of interfacial and electrical properties of Al 2 O 3 / n-Ga 0.47 In 0.53 As for III-V impact ionization MOSFETs

Journal of physics. Conference series, 2015-10, Vol.647, p.12062

2015

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Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Journal of physics. Conference series, 2015-10, Vol.647

2015

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Impedance measurements in La0.7Sr0.3MnO3 thin films for uncooled THz bolometers

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022, p.1-2

2022

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Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2023, p.1-2

2023

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Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

2017 Spanish Conference on Electron Devices (CDE), 2017, p.1-4

2017

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Improvement of interfacial properties of Al2O3/GaSb using O2 plasma postoxidation process

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, p.1-2

2016

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Fabrication Process of Non-Linear Planar Diodes Based on GaN

2018 Spanish Conference on Electron Devices (CDE), 2018, p.1-4

2018

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Mettre en mots la comparaison : analyses de pratiques [Coord. n°19-1 de : Revue internationale de politique comparée]

Revue internationale de politique comparée, 2012, Vol.19-1

2012

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Débats et luttes de normes en professionnalisation des travailleurs sociaux. La question des hypothèses au prisme du mémoire de pratique professionnelle

Sociographe, 2023-12, Vol.N° 84 (5), p.11-26

Lechaux, Patrick

2023

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Distinguer sans discriminer ? Le combat paradoxal du théâtre new-yorkais

Critique internationale (Paris. 1998), 2021-01, Vol.N° 93 (4), p.115-136

Lechaux, Bleuwenn

2021

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La professionnalisation-formation en tensions : l’épreuve du travail des frontières et des normes du métier

Empan, 2018-03, Vol.n° 109 (1), p.36-42

Lechaux, Patrick

2018

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Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

Solvation Effects on Self-Association and Segregation Processes in tert-Butanol–Aprotic Solvent Binary Mixtures

Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors

Penser les frontières sociales: Enquêtes sur la culture, l’engagement et la politique

Impact ionization and band-to-band tunneling in In x Ga 1-x As PIN ungated devices: A Monte Carlo analysis

Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process

Comprehensive characterization of Gunn oscillations in In 0.53 Ga 0.47 As planar diodes

Solvation Effects on Self-Association and Segregation Processes in tert -Butanol–Aprotic Solvent Binary Mixtures

Improvement of interfacial and electrical properties of Al 2 O 3 / n-Ga 0.47 In 0.53 As for III-V impact ionization MOSFETs

Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Impedance measurements in La0.7Sr0.3MnO3 thin films for uncooled THz bolometers

Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers

Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

Improvement of interfacial properties of Al2O3/GaSb using O2 plasma postoxidation process

Fabrication Process of Non-Linear Planar Diodes Based on GaN

Mettre en mots la comparaison : analyses de pratiques [Coord. n°19-1 de : Revue internationale de politique comparée]

Débats et luttes de normes en professionnalisation des travailleurs sociaux. La question des hypothèses au prisme du mémoire de pratique professionnelle

Distinguer sans discriminer ? Le combat paradoxal du théâtre new-yorkais

La professionnalisation-formation en tensions : l’épreuve du travail des frontières et des normes du métier

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