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Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Carbon (New York), 2020-12, Vol.170, p.666-676

2020

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REFMAC5 dictionary: organization of prior chemical knowledge and guidelines for its use

Acta crystallographica. Section D, Biological crystallography., 2004-12, Vol.60 (12-1), p.2184-2195

2004

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High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Materials science forum, 2013-01, Vol.740-742, p.73-76

2013

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High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide

Materials science forum, 2013-01, Vol.740-742, p.1065-1068

2013

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CCP4 Cloud for structure determination and project management in macromolecular crystallography

Acta crystallographica. Section D, Biological crystallography., 2022-09, Vol.78 (9), p.1079-1089

2022

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Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Radiation physics and chemistry (Oxford, England : 1993), 2021-08, Vol.185, p.109514, Article 109514

2021

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Materials science forum, 2013-01, Vol.740-742, p.745-748

2013

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Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs

Radiation physics and chemistry (Oxford, England : 1993), 2020-12, Vol.177, p.109200, Article 109200

2020

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15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Materials science forum, 2013-01, Vol.740-742, p.978-981

2013

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Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Materials science forum, 2013-01, Vol.740-742, p.958-961

2013

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Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face

Materials science forum, 2013-01, Vol.740-742, p.506-509

2013

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Crystal structure of human CRMP-4: correction of intensities for lattice-translocation disorder

Acta crystallographica. Section D, Biological crystallography., 2014-06, Vol.70 (6), p.1680-1694

2014

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Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

Materials science forum, 2013-01, Vol.740-742, p.785-788

2013

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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.217-220

2013

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Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

Materials science forum, 2013, Vol.740-742, p.727-732

2013

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1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Materials science forum, 2013-01, Vol.740-742, p.1123-1127

2013

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Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States

Materials science forum, 2013-01, Vol.740-742, p.141-144

2013

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Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.1010-1013

2013

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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Materials science forum, 2013-01, Vol.740-742, p.181-184

2013

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4H-SiC Trench MOSFET with Thick Bottom Oxide

Materials science forum, 2013-01, Vol.740-742, p.683-686

2013

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A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs

Materials science forum, 2013-01, Vol.740-742, p.549-552, Article 549

2013

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Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Materials science forum, 2013-01, Vol.740-742, p.23-26

2013

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Growth of Large Diameter 4H-SiC by TSSG Technique

Materials science forum, 2013-01, Vol.740-742, p.65-68

2013

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Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface

Materials science forum, 2013-01, Vol.740-742, p.723-726

2013

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Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

Materials science forum, 2013-01, Vol.740-742, p.661-664

2013

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Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

REFMAC5 dictionary: organization of prior chemical knowledge and guidelines for its use

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide

CCP4 Cloud for structure determination and project management in macromolecular crystallography

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face

Crystal structure of human CRMP-4: correction of intensities for lattice-translocation disorder

Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

4H-SiC Trench MOSFET with Thick Bottom Oxide

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Growth of Large Diameter 4H-SiC by TSSG Technique

Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

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