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Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

Thin solid films, 2011-09, Vol.519 (22), p.7911-7917

2011

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High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

Solid-state electronics, 2011-08, Vol.62 (1), p.189-194

2011

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Ultra high hole mobilities in a pure strained Ge quantum well

Thin solid films, 2014-04, Vol.557, p.329-333

2014

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Evidence of strong spin–orbit interaction in strained epitaxial germanium

Thin solid films, 2016-03, Vol.602, p.84-89

2016

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Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.288-297

2017

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Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Thin solid films, 2012-02, Vol.520 (8), p.3222-3226

2012

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Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

Thin solid films, 2012-02, Vol.520 (8), p.3227-3231

2012

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Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Journal of crystal growth, 2011-03, Vol.318 (1), p.337-340

2011

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Electrical properties and strain distribution of Ge suspended structures

Solid-state electronics, 2015-06, Vol.108, p.13-18

2015

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

Solid-state electronics, 2011-06, Vol.60 (1), p.42-45

2011

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Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II

Journal of experimental and theoretical physics, 2012-09, Vol.115 (3), p.480-484

2012

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Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

Annalen der Physik, 2009-12, Vol.521 (12), p.939-943

2009

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Thin solid films, 2008-11, Vol.517 (1), p.17-19

2008

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Journal of experimental and theoretical physics, 2010-09, Vol.111 (3), p.495-502

2010

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On the electron mobility enhancement in biaxially strained Si MOSFETs

Solid-state electronics, 2008-04, Vol.52 (4), p.498-505

2008

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields

Annalen der Physik, 2009-12, Vol.18 (12), p.939-943

2009

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Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.216-221

2010

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Temperature-dependent high-current breakdown of the quantum Hall effect

Physica. E, Low-dimensional systems & nanostructures, 2004-04, Vol.22 (1), p.201-204

2004

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Measurements of composite Skyrmions at filling factor [formula omitted]

Physica. B, Condensed matter, 1998-06, Vol.249, p.23-26, Article 23

1998

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Electron-phonon interactions in low dimensional structures

Leadley, D.R

1990

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Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

Ultra high hole mobilities in a pure strained Ge quantum well

Evidence of strong spin–orbit interaction in strained epitaxial germanium

Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Superconducting platinum silicide for electron cooling in silicon

Electrical properties and strain distribution of Ge suspended structures

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Improved effective mobility extraction in MOSFETs

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

On the electron mobility enhancement in biaxially strained Si MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields

Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Temperature-dependent high-current breakdown of the quantum Hall effect

Measurements of composite Skyrmions at filling factor [formula omitted]

Electron-phonon interactions in low dimensional structures

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