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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

Nanotechnology, 2010-01, Vol.21 (1), p.015602-015602

2010

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Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions

Physical review. B, 2020-06, Vol.101 (24), p.1, Article 245202

2020

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Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

Nanotechnology, 2009-08, Vol.20 (33), p.332001-332001

2009

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Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method

Applied physics. A, Materials science & processing, 2010-08, Vol.100 (2), p.467-472

2010

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Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantum wells

Nanotechnology, 2008-03, Vol.19 (11), p.115202-115202 (6)

2008

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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Journal of crystal growth, 2011-05, Vol.322 (1), p.15-22

2011

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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

Journal of luminescence, 2010-06, Vol.130 (6), p.963-968

2010

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Experimental determination of intrinsic nonlinearities in semiconductor microcavities

Physical review. B, Condensed matter, 2002-09, Vol.66 (11), Article 113301

2002

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Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes

Physica status solidi. A, Applications and materials science, 2010-01, Vol.207 (1), p.67-72

2010

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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Phys. Status Solidi (b). Vol. 240, no. 2, pp. 314-317. 2003, 2003-11, Vol.240 (2), p.314-317

2003

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The growth and rare-earth doping of GaN quantum dots on Alx Ga1-x N layer by plasma-assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.290-293

2007

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Erratum: Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions [Phys. Rev. B 101 , 245202 (2020)]

Physical review. B, 2020-08, Vol.102 (7), p.1, Article 079903

2020

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Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Applied physics letters, 2003-12, Vol.83 (25), p.5196-5198

2003

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Coherent dynamics of microcavity polaritons in the nonlinear regime

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.427-431

2002

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Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling

Applied physics letters, 2004-03, Vol.84 (9), p.1435-1437

2004

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The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.290-293

2007

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12 - Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Modeling, Characterization and Production of Nanomaterials, 2015, p.323-335

2015

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Growth of GaN-Based Nanorod Heterostructures (Core-Shell) for Optoelectronics and Their Nanocharacterization

Modeling, Characterization and Production of Nanomaterials - Electronics, Photonics and Energy Applications, 2015, p.1-1

2015

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Experimental Determination of Intrinsic Non-Linearities in Semiconductor Microcavities in the Coherent Regime

Physica status solidi. A, Applied research, 2002-04, Vol.190 (2), p.345-350

2002

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The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science (Print), 2007, Vol.204 (1), p.290-293

2007

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Polarized luminescence from KI: Sn2

Journal of luminescence, 1981-11, Vol.24-25, p.205-208

1981

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Polarized luminescence from KI: Sn 2

Journal of luminescence, 1981, Vol.24, p.205-208

1981

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Luminescence decay times of KBr: Ga

Physical review. B, Condensed matter, 1978-01, Vol.18 (7), p.2989-2994

1978

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Experimental determination of intrinsic non-linearities in semiconductor micro cavities in the coherent regime

Physica status solidi. A, Applied research, 2002, Vol.190 (2), p.345-350

2002

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Emission spectroscopy of alkali halide phosphors doped with s 2 ions: KI: Sn 2

Physical review. B, Condensed matter, 1980-09, Vol.22 (6), p.3010-3020

1980

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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method

Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantum wells

Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

Experimental determination of intrinsic nonlinearities in semiconductor microcavities

Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

The growth and rare-earth doping of GaN quantum dots on Alx Ga1-x N layer by plasma-assisted molecular beam epitaxy

Erratum: Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions [Phys. Rev. B 101 , 245202 (2020)]

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Coherent dynamics of microcavity polaritons in the nonlinear regime

Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling

The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy

12 - Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Growth of GaN-Based Nanorod Heterostructures (Core-Shell) for Optoelectronics and Their Nanocharacterization

Experimental Determination of Intrinsic Non-Linearities in Semiconductor Microcavities in the Coherent Regime

The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

Polarized luminescence from KI: Sn2

Polarized luminescence from KI: Sn 2

Luminescence decay times of KBr: Ga

Experimental determination of intrinsic non-linearities in semiconductor micro cavities in the coherent regime

Emission spectroscopy of alkali halide phosphors doped with s 2 ions: KI: Sn 2

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