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Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

Applied physics letters, 2015-05, Vol.106 (18)

2015

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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Applied physics letters, 2019-04, Vol.114 (17)

2019

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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Physica status solidi. C, 2009-10, Vol.6 (10), p.2207-2211

2009

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Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

Optical and quantum electronics, 2014-10, Vol.46 (10), p.1397-1403

2014

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Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.2192-2194

2017

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Highlighting excitonic optical properties of bundled carbon nanotubes to tailor efficient saturable absorbers

Physica status solidi. C, 2009-10, Vol.6 (10), p.2160-2163

2009

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Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.040206-040206-3

2011

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Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Optics letters, 2021-05, Vol.46 (10), p.2465-2468

2021

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Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4R), p.40206

2011

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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

IEEE photonics technology letters, 2021-01, Vol.33 (2), p.69-72

2021

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IEEE_Xplore

Achievement of InSb Quantum Dots on InP(100) Substrates

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.060210-060210-3

2010

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Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10R), p.6903

2007

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Universal description of III-V/Si epitaxial growth processes

Physical review materials, 2018-06, Vol.2 (6), Article 060401

2018

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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Journal of applied physics, 2013-03, Vol.113 (12)

2013

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Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

IEEE photonics technology letters, 2017-07, Vol.29 (13), p.1105-1108

2017

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IEEE_Xplore

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Journal of crystal growth, 2013-10, Vol.380, p.157-162

2013

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Abrupt GaP/Si hetero-interface using bistepped Si buffer

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup

Journal of applied crystallography, 2015-06, Vol.48 (3), p.702-710

2015

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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (20), Article 205316

2012

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Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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MBE growth and doping of AlGaP

Journal of crystal growth, 2017-05, Vol.466, p.6-15

2017

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Copper electroplating into deep microvias for the “SiP” application

Microelectronic engineering, 2011-05, Vol.88 (5), p.749-753

2011

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Journal of crystal growth, 2011-05, Vol.323 (1), p.409-412

2011

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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

Applied physics letters, 2011-06, Vol.98 (25), p.251110-251110-3

2011

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Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell

Highlighting excitonic optical properties of bundled carbon nanotubes to tailor efficient saturable absorbers

Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration

Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

Achievement of InSb Quantum Dots on InP(100) Substrates

Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks

Universal description of III-V/Si epitaxial growth processes

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup

High-gain and low-threshold InAs quantum-dot lasers on InP

Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

MBE growth and doping of AlGaP

Copper electroplating into deep microvias for the “SiP” application

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

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