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In Situ Hybridization Testing for HPV E6/E7 mRNA Correlates Better With p16 Overexpression Than HPV DNA in Oropharyngeal Squamous Cell Carcinoma: Evaluating the Clinical Utility of a Novel Testing Algorithm

International journal of radiation oncology, biology, physics, 2014-02, Vol.88 (2), p.472-473

2014

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Simulation of oxide trapping noise in submicron n-channel MOSFETs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.846-852

2003

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Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1353-1362

2003

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Glucocorticoids and histone deacetylase inhibitors cooperate to block the invasiveness of basal-like breast cancer cells through novel mechanisms

Oncogene, 2013-03, Vol.32 (10), p.1316-1329

2013

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Combustion chemistry of the propanol isomers — investigated by electron ionization and VUV-photoionization molecular-beam mass spectrometry

Combustion and flame, 2009-06, Vol.156 (6), p.1181-1201

2009

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Selective detection of isomers with photoionization mass spectrometry for studies of hydrocarbon flame chemistry

The Journal of chemical physics, 2003-10, Vol.119 (16), p.8356-8365

2003

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On implant-based multiple gate oxide schemes for system-on-chip integration

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.589-600

2003

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Overexpression of Syk tyrosine kinase in peripheral T-cell lymphomas

Leukemia, 2008-06, Vol.22 (6), p.1139-1143

2008

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Maximum allowable bulk defect density for generation-recombination noise-free device operation

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.2080-2082

2002

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In Situ Hybridization Testing for HPV E6/E7 mRNA Correlates Better With p16 Overexpression Than HPV DNA in Oropharyngeal Squamous Cell Carcinoma: Evaluating the Clinical Utility of a Novel Testing Algorithm: Definitive Management of Head-and-Neck Squamous Cell Carcinoma

International journal of radiation oncology, biology, physics, 2014-02, Vol.88 (2), p.472-473

2014

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Self-consistent model of minority-carrier lifetime, diffusion length, and mobility

IEEE electron device letters, 1991-08, Vol.12 (8), p.401-403

1991

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Influence of lattice self-heating and hot-carrier transport on device performance

IEEE transactions on electron devices, 1994-12, Vol.41 (12), p.2391-2398

1994

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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

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Allene addition to a fuel-lean ethylene flat flame

Proceedings of the Combustion Institute, 2005-01, Vol.30 (1), p.1353-1361

2005

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Laser-Induced Current Transients in Strained-Si Diodes

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3203-3209

2009

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Combustion chemistry of the propanol isomers - investigated by electron ionization and VUV-photoionization molecular-beam mass spectrometry

Combustion and flame, 2009-06, Vol.156 (6)

2009

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Comparison of Discretization Methods for Device Simulation

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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Remote sensing system for hydrogen using GaN Schottky diodes

Sensors and actuators. B, Chemical, 2005-03, Vol.105 (2), p.329-333

2005

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Dislocation loops in silicon-germanium alloys: The source of interstitials

Applied physics letters, 2005-11, Vol.87 (19), p.192111-192111-3

2005

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Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.312-317

2004

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Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles

Journal of applied physics, 2004-11, Vol.96 (9), p.4939-4944

2004

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Process Simulation: Continuum

Encyclopedia of Materials: Science and Technology, 2011, p.7867-7872

Law, M.E.

2011

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Interaction of ion-implantation-induced interstitials in B-doped SiGe

Materials science in semiconductor processing, 2007-02, Vol.10 (1), p.1-5

2007

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Improved MOSFET short-channel device using germanium implantation

IEEE electron device letters, 1988-07, Vol.9 (7), p.343-346

1988

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Kinetics of {3 1 1} defect dissolution in silicon-on-insulator (SOI)

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-03, Vol.107 (2), p.198-203

2004

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In Situ Hybridization Testing for HPV E6/E7 mRNA Correlates Better With p16 Overexpression Than HPV DNA in Oropharyngeal Squamous Cell Carcinoma: Evaluating the Clinical Utility of a Novel Testing Algorithm

Simulation of oxide trapping noise in submicron n-channel MOSFETs

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Glucocorticoids and histone deacetylase inhibitors cooperate to block the invasiveness of basal-like breast cancer cells through novel mechanisms

Combustion chemistry of the propanol isomers — investigated by electron ionization and VUV-photoionization molecular-beam mass spectrometry

Selective detection of isomers with photoionization mass spectrometry for studies of hydrocarbon flame chemistry

On implant-based multiple gate oxide schemes for system-on-chip integration

Overexpression of Syk tyrosine kinase in peripheral T-cell lymphomas

Maximum allowable bulk defect density for generation-recombination noise-free device operation

In Situ Hybridization Testing for HPV E6/E7 mRNA Correlates Better With p16 Overexpression Than HPV DNA in Oropharyngeal Squamous Cell Carcinoma: Evaluating the Clinical Utility of a Novel Testing Algorithm: Definitive Management of Head-and-Neck Squamous Cell Carcinoma

Self-consistent model of minority-carrier lifetime, diffusion length, and mobility

Influence of lattice self-heating and hot-carrier transport on device performance

Ion beams in silicon processing and characterization

Allene addition to a fuel-lean ethylene flat flame

Laser-Induced Current Transients in Strained-Si Diodes

Combustion chemistry of the propanol isomers - investigated by electron ionization and VUV-photoionization molecular-beam mass spectrometry

Comparison of Discretization Methods for Device Simulation

Remote sensing system for hydrogen using GaN Schottky diodes

Dislocation loops in silicon-germanium alloys: The source of interstitials

Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles

Process Simulation: Continuum

Interaction of ion-implantation-induced interstitials in B-doped SiGe

Improved MOSFET short-channel device using germanium implantation

Kinetics of {3 1 1} defect dissolution in silicon-on-insulator (SOI)

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