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X-ray emission from chemically bound atoms

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-04, Vol.109, p.42-46

1996

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700 Mb/s monolithically integrated four-channel receiver array OEIC using ion-implanted InGaAs JFET technology

IEEE photonics technology letters, 1995-05, Vol.7 (5), p.543-545

1995

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Diffusion from SiO 2 :Zn Spin-on Films into n-In 0.53 Ga 0.47 As

Japanese Journal of Applied Physics, 1986-07, Vol.25 (7A), p.L589

1986

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Ion implanted confinement layer for an InP/InGaAs/InP :Fe heterojunction field-effect transistor

Applied physics letters, 1990-07, Vol.57 (5), p.481-483

1990

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Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer

IEEE electron device letters, 1987-08, Vol.8 (8), p.353-354

1987

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Improved n contact and series resistance in InP/InGaAs heterostructures by Si ion implantation demonstrated on junction field-effect transistors

Journal of applied physics, 1992-11, Vol.72 (10), p.4998-5000

1992

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2-µm Gate-length enhancement mode InGaAs/InP:Fe-JFET's with high transconductance

IEEE electron device letters, 1986-02, Vol.7 (2), p.66-68

1986

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2-mu m Gate-length enhancement mode InGaAs/InP:Fe-JFET' s with high transconductance

IEEE electron device letters, 1986-02, Vol.7 (2), p.66-68

1986

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2-μm gate-length enhancement mode InGaAs/InP:Fe-JFET's with high transconductance

IEEE electron device letters, 1986-02, Vol.7 (2), p.66-68

1986

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Yrast levels of $^{220}$Ra populated in the $^{208}$Pb($^{14}$C,2n) reaction

Nuclear physics. A, 1985-01, Vol.432, p.421-435

1985

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Fully ion-implanted InP/InGaAs heterojunction FET fabrication in a photodiode layer structure for monolithic integration

Electronics letters, 1993, Vol.29 (18), p.1599-1600

1993

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Diffusion from SiO2: Zn spin-on films into n-In0.53Ga0.47As

Japanese journal of applied physics, 1986, Vol.25 (7), p.L589-L591

1986

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High-spin states in $^{230}$Th populated via coulomb excitation with $^{142}$Nd projectiles

Physics letters. B, 1984-06, Vol.140, p.187-190

1984

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Fabrication Of A Monolithically Integrated InP-based Waveguide-pin Photodiode Field-effect Transistor Transimpedance Receiver OEIC

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, 1992, p.B23-B24

1992

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High-spin states in 230Th populated via coulomb excitation with 142Nd projectiles

Physics letters. B, 1984-06, Vol.140 (3), p.187-190

1984

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High-spin states in 224,226,228Th and the systematics of octupole effects in even Th isotopes

Physics letters. B, 1986-07, Vol.174 (3), p.241-245

1986

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Yrast levels of 220Ra populated in the 208Pb( 14C, 2n) reaction

Nuclear physics. A, 1985, Vol.432 (2), p.421-435

1985

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Inelastic scattering and nucleon transfer in the system232Th+206Pb near the Coulomb barrier

Zeitschrift f r Physik A Hadrons and Nuclei, 1992-09, Vol.343 (3), p.267-278

1992

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Coulomb excitation of230Th with32S,84Kr and142Nd projectiles

Zeitschrift für Physik A: Atomic Nuclei, 1989-09, Vol.334 (3), p.299-314

1989

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Level structure of217Rn and221Ra investigated in the alpha-decay225Th ?221Ra ?217Rn

Zeitschrift f r Physik A Atomic Nuclei, 1989-12, Vol.332 (4), p.375-381, Article 375

1989

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Test and performance of position sensitive parallel plate avalanche detectors in heavy-ion kinematic coincidence measurements

Nuclear instruments and methods in physics research, 1983-01, Vol.217 (1), p.128-130

1983

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Nucleon transfer reactions to rotational states induced by206, 208Pb projectiles

Zeitschrift f r Physik A Atomic Nuclei, 1986-12, Vol.325 (4), p.457-466

1986

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A 600 Mbit/s monolithically integrated InP/InGaAs pin-JFET transimpedance receiver by planar technology

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.74-77

1992

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In-beam spectroscopy of thek ?=0? bands in230?236U

Zeitschrift f r Physik A Atomic Nuclei, 1987-12, Vol.328 (4), p.399-407

1987

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Coulomb excitation of230Th

Il Nuovo cimento, A, 1984-05, Vol.81 (1), p.245-249

1984

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X-ray emission from chemically bound atoms

700 Mb/s monolithically integrated four-channel receiver array OEIC using ion-implanted InGaAs JFET technology

Diffusion from SiO 2 :Zn Spin-on Films into n-In 0.53 Ga 0.47 As

Ion implanted confinement layer for an InP/InGaAs/InP :Fe heterojunction field-effect transistor

Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer

Improved n contact and series resistance in InP/InGaAs heterostructures by Si ion implantation demonstrated on junction field-effect transistors

2-µm Gate-length enhancement mode InGaAs/InP:Fe-JFET's with high transconductance

2-mu m Gate-length enhancement mode InGaAs/InP:Fe-JFET' s with high transconductance

2-μm gate-length enhancement mode InGaAs/InP:Fe-JFET's with high transconductance

Yrast levels of $^{220}$Ra populated in the $^{208}$Pb($^{14}$C,2n) reaction

Fully ion-implanted InP/InGaAs heterojunction FET fabrication in a photodiode layer structure for monolithic integration

Diffusion from SiO2: Zn spin-on films into n-In0.53Ga0.47As

High-spin states in $^{230}$Th populated via coulomb excitation with $^{142}$Nd projectiles

Fabrication Of A Monolithically Integrated InP-based Waveguide-pin Photodiode Field-effect Transistor Transimpedance Receiver OEIC

High-spin states in 230Th populated via coulomb excitation with 142Nd projectiles

High-spin states in 224,226,228Th and the systematics of octupole effects in even Th isotopes

Yrast levels of 220Ra populated in the 208Pb( 14C, 2n) reaction

Inelastic scattering and nucleon transfer in the system232Th+206Pb near the Coulomb barrier

Coulomb excitation of230Th with32S,84Kr and142Nd projectiles

Level structure of217Rn and221Ra investigated in the alpha-decay225Th ?221Ra ?217Rn

Test and performance of position sensitive parallel plate avalanche detectors in heavy-ion kinematic coincidence measurements

Nucleon transfer reactions to rotational states induced by206, 208Pb projectiles

A 600 Mbit/s monolithically integrated InP/InGaAs pin-JFET transimpedance receiver by planar technology

In-beam spectroscopy of thek ?=0? bands in230?236U

Coulomb excitation of230Th

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