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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Progress in crystal growth and characterization of materials, 2017-12, Vol.63 (4), p.105-120

2017

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Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology

Optics express, 2015-12, Vol.23 (25), p.32504-32515

2015

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Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

Applied physics letters, 2014-01, Vol.104 (3)

2014

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III–V lasers selectively grown on (001) silicon

Journal of applied physics, 2020-11, Vol.128 (20)

2020

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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Applied physics letters, 2015-02, Vol.106 (7)

2015

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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE electron device letters, 2019-04, Vol.40 (4), p.530-533

2019

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Selectively Grown III-V Lasers for Integrated Si-Photonics

Journal of lightwave technology, 2021-02, Vol.39 (4), p.940-948

2021

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IEEE_Xplore

1.55-μm Lasers Epitaxially Grown on Silicon

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-11

2019

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IEEE_Xplore

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.653-657

2021

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IEEE_Xplore

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Journal of crystal growth, 2013-05, Vol.370, p.265-268

2013

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Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

IEEE electron device letters, 2022-03, Vol.43 (3), p.346-349

2022

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Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

Journal of crystal growth, 2015-03, Vol.414, p.243-247

2015

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Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters

IEEE electron device letters, 2018-02, Vol.39 (2), p.224-227

2018

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IEEE_Xplore

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Journal of lightwave technology, 2022-08, Vol.40 (16), p.5631-5635

2022

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IEEE_Xplore

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.832-839

2017

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IEEE_Xplore

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

IEEE electron device letters, 2021-07, Vol.42 (7), p.970-973

2021

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IEEE_Xplore

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1455-1463

2008

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IEEE_Xplore

Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology

IEEE photonics technology letters, 2021-06, Vol.33 (12), p.603-606

2021

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IEEE_Xplore

A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors

IEEE microwave and wireless components letters, 2013-06, Vol.23 (6), p.318-320

2013

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IEEE_Xplore

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

IEEE electron device letters, 2016-05, Vol.37 (5), p.636-639

2016

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IEEE_Xplore

Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

IEEE photonics technology letters, 2019-06, Vol.31 (11), p.865-868

2019

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IEEE_Xplore

Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes

IEEE electron device letters, 2019-07, Vol.40 (7), p.1044-1047

2019

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IEEE_Xplore

Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz

Journal of lightwave technology, 2023-12, Vol.41 (23), p.7092-7097

2023

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IEEE_Xplore

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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

III–V lasers selectively grown on (001) silicon

Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

Selectively Grown III-V Lasers for Integrated Si-Photonics

1.55-μm Lasers Epitaxially Grown on Silicon

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology

A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes

Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz

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