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A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

e-Prime, 2022, Vol.2, p.100062, Article 100062

2022

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Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7442-7450

2021

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Evidence of Mg Segregation to Threading Dislocation in Normally-Off GaN-HEMT

IEEE transactions on nanotechnology, 2019-01, Vol.18, p.995-998

2019

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Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

IEEE transactions on microwave theory and techniques, 2016-03, Vol.64 (3), p.756-766

2016

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Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Engineering failure analysis, 2017-11, Vol.81, p.69-78

2017

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Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Materials science forum, 2022-05, Vol.1062, p.544-548

2022

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Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

Engineering failure analysis, 2018-01, Vol.83, p.185-192

2018

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Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Computers & electrical engineering, 2020-06, Vol.84, p.106622-11, Article 106622

2020

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Using MZIs for Optical PSBT Transmissions: Requirements for Thermal Stabilization

ETRI journal, 2006-10, Vol.28 (5), p.615-620

2006

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Enhanced Optical Generation of 42.7 Gbps Phase Shaped Binary Transmission

ETRI Journal, 2006, 28(6), , pp.826-829

2006

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Using MZIs for Optical PSBT Transmissions: Requirements for Thermal Stabilization

ETRI Journal, 2006, 28(5), , pp.615-620

2006

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An athermal measurement technique for long traps characterization in GaN HEMT transistors

Microelectronics and reliability, 2015-09, Vol.55, p.1703-1707

2015

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Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

2017 Annual Reliability and Maintainability Symposium (RAMS), 2017, p.1-7

2017

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Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Microscopy and microanalysis, 2017-04, Vol.23 (2), p.221-226

2017

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Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Nano express, 2021-03, Vol.2 (1), p.10037

2021

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Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Advanced electromagnetics, 2016-01, Vol.5 (3), p.20

2016

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Temperature and Dilatation Estimation for Modern Semiconductor Devices

Sensors & transducers, 2015-01, Vol.184 (1), p.130-130

2015

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Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

IEEE transactions on communications, 2008-10, Vol.56 (10), p.1722-1728

2008

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SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 2018, p.260-264

2018

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Enhanced Optical Generation of 42.7 Gbps Phase Shaped Binary Transmission

ETRI journal, 2006-12, Vol.28 (6), p.826-829

2006

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Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), 2020, p.1-6

2020

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Experimental considerations on bandwidth measurement of ultra-fast photoreceptors by optical heterodyning

Measurement : journal of the International Measurement Confederation, 2007-05, Vol.40 (4), p.406-414

2007

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Simultaneous measures of temperature and expansion on electronic compound

2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2011, p.203-207

2011

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Temperature estimation of high-electron mobility transistors AlGaN/GaN

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 2018, p.265-268

2018

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The All-fiber MZI Structure for Optical DPSK Demodulation and Optical PSBT Encoding

Journal of systemics, cybernetics and informatics, 2006-08, Vol.4 (4), p.78-89

2006

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A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Evidence of Mg Segregation to Threading Dislocation in Normally-Off GaN-HEMT

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Using MZIs for Optical PSBT Transmissions: Requirements for Thermal Stabilization

Enhanced Optical Generation of 42.7 Gbps Phase Shaped Binary Transmission

Using MZIs for Optical PSBT Transmissions: Requirements for Thermal Stabilization

An athermal measurement technique for long traps characterization in GaN HEMT transistors

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Temperature and Dilatation Estimation for Modern Semiconductor Devices

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Enhanced Optical Generation of 42.7 Gbps Phase Shaped Binary Transmission

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Experimental considerations on bandwidth measurement of ultra-fast photoreceptors by optical heterodyning

Simultaneous measures of temperature and expansion on electronic compound

Temperature estimation of high-electron mobility transistors AlGaN/GaN

The All-fiber MZI Structure for Optical DPSK Demodulation and Optical PSBT Encoding

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