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Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Applied physics letters, 2013-01, Vol.102 (1), p.11902

2013

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Micro reflectance difference techniques: Optical probes for surface exploration

physica status solidi (b), 2012-06, Vol.249 (6), p.1119-1123

2012

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Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

Journal of applied physics, 2012-01, Vol.111 (2)

2012

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Polarization contrast linear spectroscopies for cubic semiconductors under stress: macro- and micro-reflectance difference spectroscopies

Annalen der Physik, 2011-01, Vol.523 (1-2), p.121-128

2011

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Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

APL materials, 2014-03, Vol.2 (3), p.032107-032107-8

2014

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Mid-infrared optical properties of non-magnetic-metal/CoFeB/MgO heterostructures

Journal of physics. D, Applied physics, 2023-08, Vol.56 (31), p.315301

2023

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TO-phonon anisotropies in a highly doped InP (001) grating structure

Applied physics letters, 2021-10, Vol.119 (14)

2021

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Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions

Physica status solidi. C, 2008-06, Vol.5 (8), p.2591-2594

2008

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Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

Physica status solidi. C, 2008-06, Vol.5 (8), p.2573-2577

2008

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Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs

Physica status solidi. C, 2008-06, Vol.5 (8), p.2561-2564

2008

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Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

Physica status solidi. C, 2008-06, Vol.5 (8), p.2565-2568

2008

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Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy

Applied optics (2004), 2020-05, Vol.59 (13), p.D39-D42

2020

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Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001)

Applied Optics, 2009-10, Vol.48 (30), p.5713-5717

2009

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Structure and homoepitaxial growth of GaAs(6 3 1)

Applied surface science, 2006-05, Vol.252 (15), p.5530-5533

2006

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An algorithm for the in situ analysis of optical reflectance anisotropy spectra

Journal of crystal growth, 2019-06, Vol.515, p.9-15

2019

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Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies

Physical review letters, 2006-02, Vol.96 (4), p.047402-047402, Article 047402

2006

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Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Strain induced optical anisotropies in zincblende semiconductors

Physica Status Solidi (b), 2003-12, Vol.240 (3), p.500-508

2003

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Optical anisotropies of asymmetric double GaAs (001) quantum wells

Physical review. B, 2021-01, Vol.103 (3), p.035309, Article 035309

2021

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Inside Back Cover: Micro reflectance difference techniques: Optical probes for surface exploration (Phys. Status Solidi B 6/2012)

physica status solidi (b), 2012-06, Vol.249 (6), p.n/a

2012

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Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring

Journal of crystal growth, 2015-09, Vol.425, p.21-24

2015

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Stress-induced optical anisotropies measured by modulated reflectance

Semiconductor science and technology, 2004-09, Vol.19 (9), p.R35-R46

2004

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Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition

AIP Conference Proceedings, 2018, Vol.1934 (1)

2018

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A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution

Review of scientific instruments, 2012-10, Vol.83 (10), p.103109-103109

2012

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Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Micro reflectance difference techniques: Optical probes for surface exploration

Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

Polarization contrast linear spectroscopies for cubic semiconductors under stress: macro- and micro-reflectance difference spectroscopies

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

Mid-infrared optical properties of non-magnetic-metal/CoFeB/MgO heterostructures

TO-phonon anisotropies in a highly doped InP (001) grating structure

Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions

Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs

Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy

Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001)

Structure and homoepitaxial growth of GaAs(6 3 1)

An algorithm for the in situ analysis of optical reflectance anisotropy spectra

Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies

Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy

Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy

Strain induced optical anisotropies in zincblende semiconductors

Optical anisotropies of asymmetric double GaAs (001) quantum wells

Inside Back Cover: Micro reflectance difference techniques: Optical probes for surface exploration (Phys. Status Solidi B 6/2012)

Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring

Stress-induced optical anisotropies measured by modulated reflectance

Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition

A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution

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