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Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

Nano letters, 2012-02, Vol.12 (2), p.763-768

2012

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Transport spectroscopy of a single dopant in a gated silicon nanowire

Physical review letters, 2006-11, Vol.97 (20), p.206805-206805, Article 206805

2006

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Tunable Kondo Effect in a Single Donor Atom

Nano letters, 2010-02, Vol.10 (2), p.455-460

2010

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Nature physics, 2008-06, Vol.4 (8), p.656-661

2008

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Nature physics, 2008-08, Vol.4 (8), p.656-661

2008

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Magnetic-field probing of an SU(4) Kondo resonance in a single-atom transistor

Physical review letters, 2012-01, Vol.108 (4), p.046803-046803, Article 046803

2012

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Orbital Stark effect and quantum confinement transition of donors in silicon

Physical review. B, Condensed matter and materials physics, 2009-10, Vol.80 (16), Article 165314

2009

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Lifetime-enhanced transport in silicon due to spin and valley blockade

Physical review letters, 2011-09, Vol.107 (13), p.136602-136602, Article 136602

2011

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Ternary logic implemented on a single dopant atom field effect silicon transistor

Applied physics letters, 2010-01, Vol.96 (4)

2010

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Applied physics letters, 2007-02, Vol.90 (7)

2007

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Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

Journal of applied physics, 2011-07, Vol.110 (1), p.014512-014512-6

2011

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Sub-threshold study of undoped trigate nFinFET

Thin solid films, 2010-02, Vol.518 (9), p.2521-2523

2010

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Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Physical review. B, Condensed matter and materials physics, 2011-09, Vol.84 (11), Article 115428

2011

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A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.9.5.1-9.5.4

2015

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Coherent transport through a double donor system in silicon

Applied physics letters, 2010-02, Vol.96 (7), p.072110-072110-3

2010

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Reconfigurable Logic Devices on a Single Dopant Atom-Operation up to a Full Adder by Using Electrical Spectroscopy

Chemphyschem, 2009-01, Vol.10 (1), p.162-173

2009

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Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett. 107 , 136602 (2011)]

Physical review letters, 2013-01, Vol.110 (4), Article 049901

2013

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Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components

2014 IEEE International Reliability Physics Symposium, 2014, p.6C.4.1-6C.4.6

2014

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Ternary logic implemented on a single dopant atom field effectsilicon transistor

Applied physics letters, 2010-01, Vol.96 (4), p.043107-043107-3

2010

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AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.55-58

2014

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Subthreshold channels at the edges of nanoscale triple-gatesilicon transistors

Applied physics letters, 2007-02, Vol.90 (7), p.073502-073502-3

2007

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Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

Applied physics letters, 2007, Vol.90 (7)

2007

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Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.293-296

2014

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Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

Physical review. B, Condensed matter and materials physics, 2011-05, Vol.83 (19), Article 195323

2011

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Transport spectroscopy of a single atom in a FinFET

Journal of physics. Conference series, 2008-03, Vol.109 (1), p.012003

2008

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Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

Transport spectroscopy of a single dopant in a gated silicon nanowire

Tunable Kondo Effect in a Single Donor Atom

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Magnetic-field probing of an SU(4) Kondo resonance in a single-atom transistor

Orbital Stark effect and quantum confinement transition of donors in silicon

Lifetime-enhanced transport in silicon due to spin and valley blockade

Ternary logic implemented on a single dopant atom field effect silicon transistor

Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

Sub-threshold study of undoped trigate nFinFET

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Coherent transport through a double donor system in silicon

Reconfigurable Logic Devices on a Single Dopant Atom-Operation up to a Full Adder by Using Electrical Spectroscopy

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett. 107 , 136602 (2011)]

Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components

Ternary logic implemented on a single dopant atom field effectsilicon transistor

AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability

Subthreshold channels at the edges of nanoscale triple-gatesilicon transistors

Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

Transport spectroscopy of a single atom in a FinFET

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