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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2268-2279

2001

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Applied physics letters, 1998-04, Vol.72 (14), p.1718-1720

1998

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Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor science and technology, 2004-01, Vol.19 (1), p.L4-L8

2004

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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The crystallographic properties of Strained silicon measured by X-ray diffraction

Journal of materials science. Materials in electronics, 2006-02, Vol.17 (2), p.137-147

2006

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High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers

Applied physics letters, 1998-10, Vol.73 (15), p.2125-2127

1998

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SiGe-free strained Si on insulator by wafer bonding and layer transfer

Applied physics letters, 2003-06, Vol.82 (24), p.4256-4258

2003

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Dislocation dynamics in relaxed graded composition semiconductors

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.67 (1), p.53-61

1999

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Relaxed template for fabricating regularly distributed quantum dot arrays

Applied physics letters, 1997-12, Vol.71 (24), p.3567-3568

1997

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Thin solid films, 2006-08, Vol.513 (1), p.300-306

2006

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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Applied physics letters, 1998-11, Vol.73 (21), p.3111-3113

1998

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Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

Journal of applied physics, 2003-10, Vol.94 (8), p.4980-4985

2003

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Strained Si on insulator technology: from materials to devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1357-1367

2004

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Fully depleted n-MOSFETs on supercritical thickness strained SOI

IEEE electron device letters, 2004-02, Vol.25 (2), p.83-85

2004

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Dislocations in Relaxed SiGe/Si Heterostructures

Physica status solidi. A, Applied research, 1999-01, Vol.171 (1), p.227-238

1999

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Preparation of novel SiGe-free strained Si on insulator substrates

2002 IEEE International SOI Conference, 2002, p.211-212

2002

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Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography

Applied physics letters, 2006-05, Vol.88 (22), p.224102-224102-3

2006

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Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm

2005 IEEE International SOI Conference Proceedings, 2005, p.24-26

2005

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Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, 2002, p.1043-1046

2002

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Relaxed silicon-germanium on insulator substrate by layer transfer

Journal of electronic materials, 2001-12, Vol.30 (12), p.L37-L39

2001

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DC and RF characterization of fully depleted strained SOI MOSFETs

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004, p.86-88

2004

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Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition

MRS proceedings, 1998-01, Vol.510, Article 107

1998

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Dislocation engineering in strained mos materials

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.513-516

2005

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Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-03, Vol.20 (2), p.725-727

2002

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High temperature mechanical behavior of porous ceria and ceria‐based solid‐oxide fuel cells

Journal of the American Ceramic Society, 2019-09, Vol.102 (9), p.5565-5575

2019

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Film thickness constraints for manufacturable strained silicon CMOS

High quality Ge on Si by epitaxial necking

The crystallographic properties of Strained silicon measured by X-ray diffraction

High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers

SiGe-free strained Si on insulator by wafer bonding and layer transfer

Dislocation dynamics in relaxed graded composition semiconductors

Relaxed template for fabricating regularly distributed quantum dot arrays

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

Strained Si on insulator technology: from materials to devices

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Dislocations in Relaxed SiGe/Si Heterostructures

Preparation of novel SiGe-free strained Si on insulator substrates

Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography

Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm

Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

Relaxed silicon-germanium on insulator substrate by layer transfer

DC and RF characterization of fully depleted strained SOI MOSFETs

Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition

Dislocation engineering in strained mos materials

Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

High temperature mechanical behavior of porous ceria and ceria‐based solid‐oxide fuel cells

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