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Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5221-5222

2009

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Effects of defect clustering in neutron irradiated silicon

Physica. B, Condensed matter, 2007-12, Vol.401, p.491-494

2007

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Macroscopic bony deficiency of the tegmen tympani in adult temporal bones

Journal of laryngology and otology, 1983-08, Vol.97 (8), p.685-688

Lang, D.V.

1983

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Gain and defect bi-stability in radiation damaged silicon bipolar transistors

Physica. B, Condensed matter, 2007-12, Vol.401, p.21-24

2007

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Photo-generation of spins in trans-polyacetylene

Synthetic metals, 1987, Vol.17 (1), p.569-576

1987

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Very high purity GaAs grown by gas source molecular beam epitaxy

Journal of crystal growth, 1989-02, Vol.95 (1), p.185-188

1989

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Defects and Future Semiconductor Devices

Materials science forum, 1989-01, Vol.38-41, p.13-24

Lang, D.V.

1989

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Resolution of the a-Si:H DLTS energy scale controversy

Journal of non-crystalline solids, 1984-01, Vol.66 (1), p.217-222

1984

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Defects in Organic Molecular Crystals: Spectroscopy and Effects on Electronic and Optical Properties

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.240-242

2007

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A DLTS study of the gap states of amorphous Si1−xHx alloys

Journal of non-crystalline solids, 1980-01, Vol.35-36, p.581-586

1980

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Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Solid-state electronics, 1998-12, Vol.42 (12), p.2239-2250

1998

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AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates

60th DRC. Conference Digest Device Research Conference, 2002, p.33

2002

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Observation of Recombination-Enhanced Defect Reactions in Semiconductors

Physical review letters, 1974-08, Vol.33 (8), p.489-492

1974

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VI-1 observation of a nonradiative donor-related defect center in Al x Ga 1-x As with anomalously large lattice relaxation

IEEE transactions on electron devices, 1977-09, Vol.24 (9), p.1215-1215

1977

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Variation of background impurities in Al xGa 1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness

Journal of crystal growth, 1991, Vol.111 (1), p.20-25

1991

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Variation of background impurities in AlxGa1-xAs (0.3≤x≤0.4) with growth temperature : implications for device leakage current and surface/heterointerface roughness

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.20-25

1991

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Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures For High Speed Circuit Applications

MRS proceedings, 1997, Vol.483, Article 413

1997

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Observation of athermal defect annealing in GaP

Applied physics letters, 1976-03, Vol.28 (5), p.248-250

1976

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Recombination-Enhanced Annealing of the E1 and E2 Defect Levels in 1 MeV Electron-Irradiated n-GaAs

Journal of applied physics, 1976-08, Vol.47 (8), p.3587-3591

1976

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Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130), 1998, p.197-198

1998

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V-5 capacitance spectroscopy studies of degraded Al x Ga 1-x As DH stripe geometry lasers

IEEE transactions on electron devices, 1976-11, Vol.23 (11), p.1261-1261

1976

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VI-1 observation of a nonradiative donor-related defect center in AlxGa1-xAs with anomalously large lattice relaxation

IEEE transactions on electron devices, 1977-09, Vol.24 (9), p.1215-1215

1977

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A DLTS study of the gap states of amorphous Si 1− xH x alloys

Journal of non-crystalline solids, 1980, Vol.35, p.581-586

1980

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GaAs on silicon grown by molecular beam epitaxy: Progress and applications for selectively doped heterostructure transistors

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-09, Vol.3 (4), p.485-496

1989

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WP-B6 investigation of heterojunctions for MIS devices with insulating Al x Ga 1-x As on n-type GaAs

IEEE transactions on electron devices, 1978-11, Vol.25 (11), p.1361-1361

1978

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Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

Effects of defect clustering in neutron irradiated silicon

Macroscopic bony deficiency of the tegmen tympani in adult temporal bones

Gain and defect bi-stability in radiation damaged silicon bipolar transistors

Photo-generation of spins in trans-polyacetylene

Very high purity GaAs grown by gas source molecular beam epitaxy

Defects and Future Semiconductor Devices

Resolution of the a-Si:H DLTS energy scale controversy

Defects in Organic Molecular Crystals: Spectroscopy and Effects on Electronic and Optical Properties

A DLTS study of the gap states of amorphous Si1−xHx alloys

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates

Observation of Recombination-Enhanced Defect Reactions in Semiconductors

VI-1 observation of a nonradiative donor-related defect center in Al x Ga 1-x As with anomalously large lattice relaxation

Variation of background impurities in Al xGa 1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness

Variation of background impurities in AlxGa1-xAs (0.3≤x≤0.4) with growth temperature : implications for device leakage current and surface/heterointerface roughness

Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures For High Speed Circuit Applications

Observation of athermal defect annealing in GaP

Recombination-Enhanced Annealing of the E1 and E2 Defect Levels in 1 MeV Electron-Irradiated n-GaAs

Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition

V-5 capacitance spectroscopy studies of degraded Al x Ga 1-x As DH stripe geometry lasers

VI-1 observation of a nonradiative donor-related defect center in AlxGa1-xAs with anomalously large lattice relaxation

A DLTS study of the gap states of amorphous Si 1− xH x alloys

GaAs on silicon grown by molecular beam epitaxy: Progress and applications for selectively doped heterostructure transistors

WP-B6 investigation of heterojunctions for MIS devices with insulating Al x Ga 1-x As on n-type GaAs

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