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Calculation of the Response of Field-Effect Transistors to Charged Biological Molecules

IEEE sensors journal, 2007-09, Vol.7 (9), p.1233-1242

2007

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Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design

Microelectronics and reliability, 2007-12, Vol.47 (12), p.2025-2057

2007

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Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10R), p.6586

2007

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Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors

Journal of applied physics, 2005-08, Vol.98 (4)

2005

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Noise considerations in field-effect biosensors

Journal of applied physics, 2006-10, Vol.100 (7), p.074703-074703-8

2006

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Sensitivity of field-effect biosensors to charge, pH, and ion concentration in a membrane model

Journal of applied physics, 2008-12, Vol.104 (12)

2008

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Improved Model for Nanowire BioFETs on SOI Operating in Electrolyte

ECS transactions, 2011, Vol.35 (7), p.17-28

2011

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Sensitivity of a field-effect transistor in detecting DNA hybridization, calculated from the cylindrical Poisson-Boltzmann equation

Journal of applied physics, 2006-09, Vol.100 (5), p.054703-054703-8

2006

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Effect of screening on the sensitivity of field-effect devices used to detect oligonucleotides

Applied physics letters, 2008-06, Vol.92 (25)

2008

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Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

Journal of the Electrochemical Society, 2009, Vol.156 (8), p.G89

2009

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Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

Applied physics letters, 2003-09, Vol.83 (13), p.2638-2640

2003

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Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

Applied physics letters, 2001-03, Vol.78 (12), p.1718-1720

2001

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Surface-directed spinodal decomposition in hafnium silicate thin films

Physical review. B, Condensed matter and materials physics, 2009-07, Vol.80 (4), Article 041403

2009

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Performance Improvement of CoTiO[sub 3] High-k Dielectrics with Nitrogen Incorporation

Journal of the Electrochemical Society, 2007, Vol.154 (1), p.G18

2007

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Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM

Thin solid films, 2004-05, Vol.455, p.318-322

2004

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CoTiO3 high-κ dielectrics on HSG for DRAM applications

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2200-2204

2004

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Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001)

Journal of applied physics, 2002-03, Vol.91 (5), p.2921-2928

2002

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Growth and characterization of thin anodic oxide films on n-InSb(1 0 0) formed in aqueous solutions

Corrosion science, 2004-08, Vol.46 (8), p.2067-2079

2004

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Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Applied surface science, 2001-03, Vol.173 (3-4), p.318-326

2001

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Structure and thermal stability of MOCVD ZrO2 films on Si (100)

Journal of crystal growth, 2003-04, Vol.250 (3-4), p.479-485

2003

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Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED

Applied surface science, 2002-11, Vol.200 (1), p.15-20

2002

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Thermal stability and diffusion in gadolinium silicate gate dielectric films

Applied physics letters, 2001-10, Vol.79 (16), p.2618-2620

2001

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Hafnium Silicate Gate Insulators in Field Effect Sensors Used to Detect DNA Hybridization

ECS transactions, 2009, Vol.16 (11), p.441-450

2009

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Composition and growth of anodic and thermal oxides on InP and GaAs

Surface and interface analysis, 2002-08, Vol.34 (1), p.481-484

2002

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X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100) in Nitrous Oxide

Journal of the Electrochemical Society, 2001, Vol.148 (7), p.F140

2001

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Calculation of the Response of Field-Effect Transistors to Charged Biological Molecules

Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design

Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals

Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors

Noise considerations in field-effect biosensors

Sensitivity of field-effect biosensors to charge, pH, and ion concentration in a membrane model

Improved Model for Nanowire BioFETs on SOI Operating in Electrolyte

Sensitivity of a field-effect transistor in detecting DNA hybridization, calculated from the cylindrical Poisson-Boltzmann equation

Effect of screening on the sensitivity of field-effect devices used to detect oligonucleotides

Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

Surface-directed spinodal decomposition in hafnium silicate thin films

Performance Improvement of CoTiO[sub 3] High-k Dielectrics with Nitrogen Incorporation

Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM

CoTiO3 high-κ dielectrics on HSG for DRAM applications

Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001)

Growth and characterization of thin anodic oxide films on n-InSb(1 0 0) formed in aqueous solutions

Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Structure and thermal stability of MOCVD ZrO2 films on Si (100)

Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED

Thermal stability and diffusion in gadolinium silicate gate dielectric films

Hafnium Silicate Gate Insulators in Field Effect Sensors Used to Detect DNA Hybridization

Composition and growth of anodic and thermal oxides on InP and GaAs

X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100) in Nitrous Oxide

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