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J-TEXT achievements in turbulence and transport in support of future device/reactor

Plasma science & technology, 2024-07

2024

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Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Journal of applied physics, 2024-03, Vol.135 (12)

2024

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Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times

Electronics (Basel), 2024-03, Vol.13 (6), p.1021

2024

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In-Memory-Computing and In-memory Cosine Similarity Search with Memory Diode Featuring Low Latency and High Energy Efficiency

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

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Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

2024 Conference of Science and Technology for Integrated Circuits (CSTIC), 2024, p.1-3

2024

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Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (> 10^) of HfZrO Anti-ferroelectrics for DRAM Applications

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P11.EM-1-P11.EM-6

2024

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO 2

IEEE electron device letters, 2023-11, Vol.44 (11), p.1833-1836

2023

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2

IEEE electron device letters, 2023-11, Vol.44 (11), p.1833-1836

2023

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Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-6

2023

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Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1671-1675

2023

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Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1671-1675

2023

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Fermi-Level Pinning Engineering for Achieving High-Performance Ge-Based Resistive Memory With Ultrahigh Self-Rectifying Ratio (> 105)

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6751-6756

2022

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Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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105

IEEE transactions on electron devices, 2022-01, Vol.69 (12), p.6751

2022

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The Bioinformatics Analyses Reveal Novel Antigen Epitopes in Major Outer Membrane Protein of Chlamydia trachomatis

Indian journal of medical microbiology, 2017-10, Vol.35 (4), p.522-528

2017

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J-TEXT achievements in turbulence and transport in support of future device/reactor

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times

In-Memory-Computing and In-memory Cosine Similarity Search with Memory Diode Featuring Low Latency and High Energy Efficiency

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (> 10^) of HfZrO Anti-ferroelectrics for DRAM Applications

Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO 2

Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2

Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Fermi-Level Pinning Engineering for Achieving High-Performance Ge-Based Resistive Memory With Ultrahigh Self-Rectifying Ratio (> 105)

Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

105

The Bioinformatics Analyses Reveal Novel Antigen Epitopes in Major Outer Membrane Protein of Chlamydia trachomatis

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