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Fabrication of yttria stabilized zirconia coatings by a novel slurry method

Thin solid films, 2006-01, Vol.494 (1), p.263-267

2006

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Scavenging property of three cresol isomers against H2O2, hypochlorite, superoxide and hydroxyl radicals

Food and chemical toxicology, 2002-10, Vol.40 (10), p.1403-1413

2002

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Low Dark Current GaN p-i-n Photodetectors With a Low-Temperature AlN Interlayer

IEEE photonics technology letters, 2008-07, Vol.20 (14), p.1255-1257

2008

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ZnSTeSe metal-semiconductor-metal photodetectors

IEEE photonics technology letters, 2002-02, Vol.14 (2), p.188-190

2002

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Compressive strain induced heavy hole and light hole splitting of Zn1-xCdxSe epilayers grown by molecular beam epitaxy

Materials chemistry and physics, 2003-02, Vol.78 (3), p.602-607

2003

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ZnCdSeTe-based orange light-emitting diode

IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1061-1063

2002

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The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1330-1333

2000

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Formation of local p+ region in ZnSe by Cu3Ge contact

Electronics letters, 1999-12, Vol.35 (25), p.2231

1999

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Effects of TGF-βs on the growth, collagen synthesis and collagen lattice contraction of human dental pulp fibroblasts in vitro

Archives of oral biology, 2005-05, Vol.50 (5), p.469-479

2005

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InN grown on GaN/sapphire templates at different temperatures by MOCVD

Optical materials, 2007-12, Vol.30 (4), p.517-520

2007

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Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO2 Roughened Surface

IEEE photonics technology letters, 2008-02, Vol.20 (4), p.285

2008

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Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO Roughened Surface

IEEE photonics technology letters, 2008-02, Vol.20 (4), p.285-287

2008

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High light output intensity of titanium dioxide textured light-emitting diodes

Solid-state electronics, 2008-08, Vol.52 (8), p.1154-1156

2008

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Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280–320 nm) detection

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-09, Vol.122 (3), p.196-200

2005

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The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-01, Vol.126 (1), p.33-36

2006

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Photo-enhanced chemical wet etching of GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-10, Vol.96 (1), p.43-47

2002

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GaN p-i-n photodetectors with an LT-GaN interlayer

IET optoelectronics, 2008-04, Vol.2 (2), p.59-62

2008

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The improvements of GaN p–i–n UV sensor on 1° off-axis sapphire substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-07, Vol.121 (1), p.86-91

2005

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Cytotoxicity of sodium fluoride on human oral mucosal fibroblasts and its mechanisms

Cell biology and toxicology, 1998-12, Vol.14 (6), p.383-389

1998

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Temperature dependence of the optical properties on GaInNP

Journal of crystal growth, 2004-12, Vol.272 (1), p.765-771

2004

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Optical properties of Cd1−xZnxTe crystals grown by temperature gradient solution growth

Materials chemistry and physics, 2003-02, Vol.78 (2), p.529-533

2003

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The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-03, Vol.128 (1), p.107-110

2006

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GaN-based light-emitting diodes prepared on vicinal sapphire substrates

IET optoelectronics, 2007-02, Vol.1 (1), p.23-26

2007

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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Journal of crystal growth, 2004-12, Vol.272 (1), p.300-304

2004

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Optical properties of Cd1−Zn Te crystals grown by temperature gradient solution growth

Materials chemistry and physics, 2003-02, Vol.78 (2), p.529-533

2003

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Fabrication of yttria stabilized zirconia coatings by a novel slurry method

Scavenging property of three cresol isomers against H2O2, hypochlorite, superoxide and hydroxyl radicals

Low Dark Current GaN p-i-n Photodetectors With a Low-Temperature AlN Interlayer

ZnSTeSe metal-semiconductor-metal photodetectors

Compressive strain induced heavy hole and light hole splitting of Zn1-xCdxSe epilayers grown by molecular beam epitaxy

ZnCdSeTe-based orange light-emitting diode

The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

Formation of local p+ region in ZnSe by Cu3Ge contact

Effects of TGF-βs on the growth, collagen synthesis and collagen lattice contraction of human dental pulp fibroblasts in vitro

InN grown on GaN/sapphire templates at different temperatures by MOCVD

Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO2 Roughened Surface

Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO Roughened Surface

High light output intensity of titanium dioxide textured light-emitting diodes

Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280–320 nm) detection

The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure

Photo-enhanced chemical wet etching of GaN

GaN p-i-n photodetectors with an LT-GaN interlayer

The improvements of GaN p–i–n UV sensor on 1° off-axis sapphire substrate

Cytotoxicity of sodium fluoride on human oral mucosal fibroblasts and its mechanisms

Temperature dependence of the optical properties on GaInNP

Optical properties of Cd1−xZnxTe crystals grown by temperature gradient solution growth

The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition

GaN-based light-emitting diodes prepared on vicinal sapphire substrates

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Optical properties of Cd1−Zn Te crystals grown by temperature gradient solution growth

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