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Discrete plasmons in finite semiconductor multilayers

Physical review letters, 1986-05, Vol.56 (19), p.2092-2095

1986

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Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

Applied physics letters, 1987-02, Vol.50 (5), p.284-286

1987

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Discovery of AZD4747, a Potent and Selective Inhibitor of Mutant GTPase KRASG12C with Demonstrable CNS Penetration

Journal of medicinal chemistry, 2023-07, Vol.66 (13), p.9147-9160

2023

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Proximal colonic response and gastrointestinal transit after high and low fat meals

Digestive diseases and sciences, 1993-10, Vol.38 (10), p.1793-1800

1993

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Laser-assisted metalorganic molecular beam epitaxy of GaAs

Applied physics letters, 1988-03, Vol.52 (13), p.1065-1067

1988

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Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si

Journal of applied physics, 1988-12, Vol.64 (12), p.6727-6732

1988

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Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs

Applied physics letters, 1988-05, Vol.52 (18), p.1475-1477

1988

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Near-gap photoluminescence of GaAs grown directly on silicon

Journal of applied physics, 1988-11, Vol.64 (10), p.5110-5116

1988

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Improvements in the heteroepitaxy of GaAs on Si

Applied physics letters, 1987-07, Vol.51 (1), p.36-38

1987

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Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs

Journal of crystal growth, 1988-06, Vol.89 (1), p.137-142

1988

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Multiple attenuation using the MMO and ISR preconditioning transforms

Leading edge (Tulsa, Okla.), 1999-01, Vol.18 (1), p.110-114

1999

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Pyloric stenosis in preterm twins

Journal of the Royal College of Surgeons of Edinburgh, 1994-06, Vol.39 (3), p.187

1994

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Photoluminescence studies of heteroepitaxial GaAs on Si

Journal of electronic materials, 1988-03, Vol.17 (2), p.115-119

1988

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Light scattering in GaAs parabolic quantum wells

Solid state communications, 1987-03, Vol.61 (10), p.601-605

1987

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Laser-modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates

Applied physics letters, 1988-03, Vol.52 (12), p.966-968

1988

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Compartment Syndrome Due to Massive Leg Hematoma After Primary Total Hip Arthroplasty

The Journal of arthroplasty, 2012-08, Vol.27 (7), p.1414.e9-1414.e11

2012

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Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

Journal of crystal growth, 1987-02, Vol.81 (1), p.159-163

1987

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Quantitative Raman Scattering from Acceptors in GaAs

MRS proceedings, 1987, Vol.104, Article 479

1987

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Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

MRS proceedings, 1987, Vol.102, Article 229

1987

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MULTIPLE ELIMINATION USING WAVEFIELD TRANSFORMATIONS OFF THE COAST OF WESTERN AUSTRALIA

The APPEA Journal, 1997, Vol.37 (1), p.777

1997

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Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F2/Gaas Substrates

MRS proceedings, 1987, Vol.101

1987

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Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F 2 /Gaas Substrates

MRS proceedings, 1987, Vol.101, Article 291

1987

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Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si

MRS proceedings, 1987, Vol.91, Article 255

1987

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Physics beyond colliders at CERN: beyond the Standard Model working group report

Journal of physics. G, Nuclear and particle physics, 2020-01, Vol.47 (1), p.10501

2020

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Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1986-07, Vol.4 (4), p.1041-1042

1986

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Discrete plasmons in finite semiconductor multilayers

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

Discovery of AZD4747, a Potent and Selective Inhibitor of Mutant GTPase KRASG12C with Demonstrable CNS Penetration

Proximal colonic response and gastrointestinal transit after high and low fat meals

Laser-assisted metalorganic molecular beam epitaxy of GaAs

Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si

Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs

Near-gap photoluminescence of GaAs grown directly on silicon

Improvements in the heteroepitaxy of GaAs on Si

Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs

Multiple attenuation using the MMO and ISR preconditioning transforms

Pyloric stenosis in preterm twins

Photoluminescence studies of heteroepitaxial GaAs on Si

Light scattering in GaAs parabolic quantum wells

Laser-modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates

Compartment Syndrome Due to Massive Leg Hematoma After Primary Total Hip Arthroplasty

Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

Quantitative Raman Scattering from Acceptors in GaAs

Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

MULTIPLE ELIMINATION USING WAVEFIELD TRANSFORMATIONS OFF THE COAST OF WESTERN AUSTRALIA

Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F2/Gaas Substrates

Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F 2 /Gaas Substrates

Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si

Physics beyond colliders at CERN: beyond the Standard Model working group report

Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells

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