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Low-divergence laser structures for cost-effective fiber coupling applications

IEEE journal of selected topics in quantum electronics, 2000-07, Vol.6 (4), p.571-576

2000

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80°C continuous wave operation of AlGaInP based visible VCSEL

Electronics letters, 2002-02, Vol.38 (5), p.222

2002

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A photoluminescence study of indium desorption from strained Ga1-xInxAs/GaAs

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.413-418

1991

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High power emission from red vertical cavity surface emitting laser array

Electronics letters, 2000-08, Vol.36 (17), p.1464-1465

2000

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Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

IEEE journal of quantum electronics, 2000-11, Vol.36 (11), p.1293-1298

2000

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Red Vertical Cavity Surface Emitting Laser Technology

30th European Solid-State Device Research Conference, 2000, p.76-86

Lambkin, J.D.

2000

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Electron transport across bulk (AlxGa1-x)0.5In0.5P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

IEEE journal of quantum electronics, 2000-11, Vol.36 (11), p.1293-1298

2000

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Photoluminescence investigation of the carrier confining properties of multiquantum barriers

IEEE journal of quantum electronics, 1997-08, Vol.33 (8), p.1338-1344

1997

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Fabrication of low-threshold red VCSELs

Materials science in semiconductor processing, 2000-10, Vol.3 (5), p.517-521

2000

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EBIC mode characterization of transport properties on laser heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.57-60

1997

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Temperature dependence of InP/GaInP quantum dot photoluminescence

Microelectronic engineering, 2000, Vol.51, p.73-78

2000

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Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.849-851

1996

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Development of a visible VCSEL-to-plastic optical fibre module for use in high-speed optical data links

Materials science in semiconductor processing, 2000-10, Vol.3 (5), p.467-473

2000

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Photoluminescence of III-V semiconductors and related heterostructures under hydrostatic pressure

Lambkin, J.D

1989

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EU project POF-PLUS: Gigabit transmission over 50 m of step-index plastic optical fibre for home networking

2009 Conference on Optical Fiber Communication - incudes post deadline papers, 2009, p.1-3

2009

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Long wavelength quantum well lasers with InGaAs/InP superlattice optical confinement and barrier layers

Electronics letters, 1993-04, Vol.29 (8), p.684-685

1993

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A photoluminescence study of indium desorption from strained Ga 1−xIn xAs/GaAs

Journal of crystal growth, 1991, Vol.111 (1), p.413-418

1991

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Growth and characterization of relaxed epilayers of InGaAs on GaAs

Journal of crystal growth, 1993-02, Vol.126 (4), p.589-600

1993

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Performance of Multiquantum Barrierx in Bulk Double Heterostructure Visible Laser Diodes As a Function of Temperature

Proceedings of European Meeting on Lasers and Electro-Optics, 1996, p.50-50

1996

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The hydrostatic pressure dependence of the band-edge photoluminescence of GaInAs

Solid state communications, 1988-08, Vol.67 (8), p.827-830

1988

Volltextzugriff (PDF)

Visible split beam VCSEL for compact sensor applications

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science, 2008, p.1-2

2008

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Gigabits in the home with plugless plastic optical fiber (POF) interconnects

2008 2nd Electronics System-Integration Technology Conference, 2008, p.1263-1266

2008

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The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure

Journal of crystal growth, 1988, Vol.93 (1-4), p.323-328

1988

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Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.393-395

1997

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MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers

Proceedings of LEOS '93, 1993, p.425-426

1993

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Low-divergence laser structures for cost-effective fiber coupling applications

80°C continuous wave operation of AlGaInP based visible VCSEL

A photoluminescence study of indium desorption from strained Ga1-xInxAs/GaAs

High power emission from red vertical cavity surface emitting laser array

Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

Red Vertical Cavity Surface Emitting Laser Technology

Electron transport across bulk (AlxGa1-x)0.5In0.5P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

Photoluminescence investigation of the carrier confining properties of multiquantum barriers

Fabrication of low-threshold red VCSELs

EBIC mode characterization of transport properties on laser heterostructures

Temperature dependence of InP/GaInP quantum dot photoluminescence

Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

Development of a visible VCSEL-to-plastic optical fibre module for use in high-speed optical data links

Photoluminescence of III-V semiconductors and related heterostructures under hydrostatic pressure

EU project POF-PLUS: Gigabit transmission over 50 m of step-index plastic optical fibre for home networking

Long wavelength quantum well lasers with InGaAs/InP superlattice optical confinement and barrier layers

A photoluminescence study of indium desorption from strained Ga 1−xIn xAs/GaAs

Growth and characterization of relaxed epilayers of InGaAs on GaAs

Performance of Multiquantum Barrierx in Bulk Double Heterostructure Visible Laser Diodes As a Function of Temperature

The hydrostatic pressure dependence of the band-edge photoluminescence of GaInAs

Visible split beam VCSEL for compact sensor applications

Gigabits in the home with plugless plastic optical fiber (POF) interconnects

The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure

Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers

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