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TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Self-Assembled Bilayers on Nanocrystalline Metal Oxides: Exploring the Non-Innocent Nature of the Linking Ions

Langmuir, 2017-09, Vol.33 (38), p.9609-9619

2017

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Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

APL materials, 2019-07, Vol.7 (7), p.071115-071115-7

2019

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Measurement of Band Offsets in Y2O3/InGaZnO4 Heterojunctions

Journal of nanoscience and nanotechnology, 2014-11, Vol.14 (11), p.8445-8448

2014

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Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency

Chemical science (Cambridge), 2018-01, Vol.9 (3), p.586-593

2018

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Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness

Journal of the Electrochemical Society, 2017, Vol.164 (9), p.C563-C573

2017

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Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-11, Vol.36 (6)

2018

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Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3

Journal of electronic materials, 2019-03, Vol.48 (3), p.1568-1573

2019

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Functionalizing Zn- and O-terminated ZnO with thiols

Journal of applied physics, 2007-05, Vol.101 (10), p.104514-104514-5

2007

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Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3

Semiconductor science and technology, 2019-01, Vol.34 (2)

2019

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Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3

Semiconductor science and technology, 2019-02, Vol.34 (2), p.25006

2019

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Characteristics of LaB6 thin films grown by pulsed laser deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-09, Vol.34 (5)

2016

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Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-09, Vol.34 (5)

2016

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Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency† †Electronic supplementary information (ESI) available. CCDC 1497737, 1580794 and 1538293. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc04539e

Chemical science (Cambridge), 2017-11, Vol.9 (3), p.586-593

2017

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Band Offsets for Atomic Layer Deposited HfSiO 4 on (Al 0.14 Ga 0.86 ) 2 O 3

ECS journal of solid state science and technology, 2018, Vol.7 (10), p.P519-P523

2018

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Band Alignment of Atomic Layer Deposited SiO 2 and Al 2 O 3 on (Al x Ga 1-x ) 2 O 3 for x = 0.2-0.65

ECS journal of solid state science and technology, 2019, Vol.8 (6), p.P351-P356

2019

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TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-09, Vol.31 (5)

2013

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Band Offsets in Dielectric/InGaZnO 4 Heterojunctions

ECS transactions, 2013-03, Vol.50 (6), p.367-375

2013

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XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

Journal of crystal growth, 2004-01, Vol.260 (3-4), p.440-446

2004

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XPS and electroluminescence studies on SrS 1− xSe x and ZnS 1− xSe x thin films deposited by atomic layer deposition technique

Journal of crystal growth, 2004, Vol.260 (3), p.440-446

2004

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XPS and electroluminescence studies on SrS1-xSexand ZnS1-xSex thin films deposited by atomic layer deposition technique

Journal of crystal growth, 2004, Vol.260 (3-4), p.440-446

2004

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Correlation of the surface composition of degassed 347 stainless steel with thermally desorbed H2 and CO

Applied surface science, 2004-04, Vol.227 (1-4), p.7-16

2004

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Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-11, Vol.18 (6), p.2699-2705

2000

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TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

Self-Assembled Bilayers on Nanocrystalline Metal Oxides: Exploring the Non-Innocent Nature of the Linking Ions

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Measurement of Band Offsets in Y2O3/InGaZnO4 Heterojunctions

Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency

Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness

Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3

Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3

Functionalizing Zn- and O-terminated ZnO with thiols

Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3

Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3

Characteristics of LaB6 thin films grown by pulsed laser deposition

Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiencyElectronic supplementary information (ESI) available. CCDC 1497737, 1580794 and 1538293. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc04539e

Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency† †Electronic supplementary information (ESI) available. CCDC 1497737, 1580794 and 1538293. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc04539e

Band Offsets for Atomic Layer Deposited HfSiO 4 on (Al 0.14 Ga 0.86 ) 2 O 3

Band Alignment of Atomic Layer Deposited SiO 2 and Al 2 O 3 on (Al x Ga 1-x ) 2 O 3 for x = 0.2-0.65

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Band Offsets in Dielectric/InGaZnO 4 Heterojunctions

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

XPS and electroluminescence studies on SrS 1− xSe x and ZnS 1− xSe x thin films deposited by atomic layer deposition technique

XPS and electroluminescence studies on SrS1-xSexand ZnS1-xSex thin films deposited by atomic layer deposition technique

Correlation of the surface composition of degassed 347 stainless steel with thermally desorbed H2 and CO

Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors

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