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Physica status solidi: November 16

G'rlich

2021

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Dielectric Constant of High and Low Temperature Phases of K-TCNQ

November 16, 2021, Vol.56, Number 1, p.473-476

2021

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Observation of electron quantum interference effects due to virtual states in a double-barrier heterostructure at room temperature

Applied physics letters, 1988-04, Vol.52 (16), p.1349-1351

1988

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Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures

Journal of applied physics, 1988-10, Vol.64 (7), p.3735-3736

1988

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Reactively rf magnetron sputtered AlN films as gate dielectric

Journal of applied physics, 1983-08, Vol.54 (8), p.4586-4589

1983

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Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Applied physics letters, 1988-06, Vol.52 (25), p.2163-2164

1988

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Effect of heating on the structure of Au/GaAs encapsulated with SiO2

Solid-state electronics, 1987-12, Vol.30 (12), p.1259-1266

1987

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Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

Solid-state electronics, 1984-10, Vol.27 (10), p.921-924

LAKHANI, A. R

1984

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Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron Gas

Physical review letters, 1977-03, Vol.38 (13), p.722-725

1977

Volltextzugriff (PDF)

The role of compound formation and heteroepitaxy in indium-based ohmic contacts to GaAs

Journal of applied physics, 1984-09, Vol.56 (6), p.1888-1891

LAKHANI, A. A

1984

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Combining resonant tunneling diodes for signal processing and multilevel logic

Applied physics letters, 1988-05, Vol.52 (20), p.1684-1685

1988

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Device-quality SiO 2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

Solid-state electronics, 1984, Vol.27 (10), p.921-924

Lakhani, Amir A.

1984

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Passivation of ohmic contacts to GaAs during alloying

Journal of applied physics, 1986-03, Vol.59 (6), p.2082-2086

LAKHANI, A. A

1986

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The growth of graded heterojunctions during heat treatment of indium films on GaAs

Materials letters, 1984, Vol.2 (6), p.508-511

Lakhani, Amir A.

1984

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Effect of heating on the structure of Au/GaAs encapsulated with SiO 2

Solid-state electronics, 1987, Vol.30 (12), p.1259-1266

1987

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Critical tests of the theory of magnetoconductance in two dimensions

Physical review. B, Solid state, 1976-06, Vol.13 (12), p.5386-5391

1976

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Enhancement of current peak-to-valley ratio in In0.52Al0.48As/In0.53Ga0.47As-based resonant tunneling diodes

Journal of applied physics, 1988-06, Vol.63 (12), p.5875-5876

1988

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Measurement of the quasi-static C- V curves of an MIS structure in the presence of charge leakage

Solid-state electronics, 1985-01, Vol.28 (5), p.447-451

1985

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Experimental Study of Oscillatory Values of g of a Two-Dimensional Electron Gas

Physical review letters, 1973-07, Vol.31 (1), p.25-28

1973

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Application of a resonant tunnelling structure to demonstrate subsurface damage and surface migration on InGaAs during AuGe contact anneal

Semiconductor science and technology, 1988-06, Vol.3 (6), p.605-607

1988

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Metallurgy and Morphology of the Interface of AuGe Ohmic Contact to GaAs

MRS proceedings, 1983, Vol.25, Article 551

1983

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A STUDY OF QUANTUM EFFECTS IN P-TYPE INVERSION LAYERS

LAKHANI, AMIR A

1974

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Effect of Heating on the Structure of Au/GaAS Encapsulated with SiO 2

MRS proceedings, 1986, Vol.77, Article 677

1986

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Effect of Heating on the Structure of Au/GaAS Encapsulated with SiO2

MRS proceedings, 1986, Vol.77

1986

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High‐temperature substage for a scanning electron microscope

Review of scientific instruments, 1984-06, Vol.55 (6), p.925-927

1984

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Physica status solidi: November 16

Dielectric Constant of High and Low Temperature Phases of K-TCNQ

Observation of electron quantum interference effects due to virtual states in a double-barrier heterostructure at room temperature

Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures

Reactively rf magnetron sputtered AlN films as gate dielectric

Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Effect of heating on the structure of Au/GaAs encapsulated with SiO2

Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron Gas

The role of compound formation and heteroepitaxy in indium-based ohmic contacts to GaAs

Combining resonant tunneling diodes for signal processing and multilevel logic

Device-quality SiO 2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

Passivation of ohmic contacts to GaAs during alloying

The growth of graded heterojunctions during heat treatment of indium films on GaAs

Effect of heating on the structure of Au/GaAs encapsulated with SiO 2

Critical tests of the theory of magnetoconductance in two dimensions

Enhancement of current peak-to-valley ratio in In0.52Al0.48As/In0.53Ga0.47As-based resonant tunneling diodes

Measurement of the quasi-static C- V curves of an MIS structure in the presence of charge leakage

Experimental Study of Oscillatory Values of g of a Two-Dimensional Electron Gas

Application of a resonant tunnelling structure to demonstrate subsurface damage and surface migration on InGaAs during AuGe contact anneal

Metallurgy and Morphology of the Interface of AuGe Ohmic Contact to GaAs

A STUDY OF QUANTUM EFFECTS IN P-TYPE INVERSION LAYERS

Effect of Heating on the Structure of Au/GaAS Encapsulated with SiO 2

Effect of Heating on the Structure of Au/GaAS Encapsulated with SiO2

High‐temperature substage for a scanning electron microscope

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