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0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.39-41

2006

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0.1 /spl mu/m enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198), 2001, p.180-183

2001

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0.1/spl mu/m InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DBIF)

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.181-184

2005

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0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu, 2002, p.77-80

2002

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0.1 /spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.455-458

2002

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A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.325-328

1994

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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4

2007

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0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technology

Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium, 2002, p.77-80

2002

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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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0.10 mu m graded InGaAs channel InP HEMT with 305 GHzf(T) and 340 GHz f(max)

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995, 1995, p.105-108

1995

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0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

ECS transactions, 2011, Vol.34 (1), p.173-181

2011

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A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.342-343

2013

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0663: Prognostic Factors and Immunochemical Study of Type I & Type II Endometrial Adenocarcinoma

International journal of gynecological cancer, 2006-10, Vol.16 (Suppl 3), p.786-786

2006

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1-(1-Pyrrolin-2-yl)-β-carbolines. Synthesis of Eudistomins H, I, and P

Chemical and Pharmaceutical Bulletin, 1989/10/25, Vol.37(10), pp.2596-2600

1989

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1,2,5-Thiadiazolidin-3-one 1,1-dioxide-based heterocyclic sulfides are potent inhibitors of human tryptase

Archives of biochemistry and biophysics, 2005-04, Vol.436 (1), p.1-7

2005

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1:27 PM, Abstract No. 40 - Experience using large volume detachable coils in the peripheral vasculature: preliminary results from the ACE multicenter study

Journal of vascular and interventional radiology, 2015-02, Vol.26 (2), p.S24-S24

2015

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1,2Aspirin-exacerbated respiratory disease involves a cysteinyl leukotriene-driven IL-33-mediated mast cell activation pathway

The Journal of immunology (1950), 2015-09, Vol.195 (8), p.3537-3545

2015

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1,3‐Bis(3‐pyridylmethyl)‐2‐thiourea

Acta crystallographica. Section E, Structure reports online, 2002-05, Vol.58 (5), p.o538-o539

2002

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1,3-Bis(3-pyridylmethyl)-2-thiourea

Acta crystallographica. Section E, Structure reports online, 2002-05, Vol.58 (5), p.o538-o539

2002

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1,3-Diphenyl-2-tricyclo[3.3.1.13,7]dec-2-ylidenepropane-1,3-diimine, and its -1-imino-3-one and -1,3-dione Derivatives

Acta crystallographica. Section C, Crystal structure communications, 1997-07, Vol.53 (7), p.956-959

1997

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1,3-diphenyl-2-tricyclo[3.3.1.13,7]dec-2-yl-idenepropane-1,3-diimine, and its -1-inlino-3-one and -1,3-dione derivatives

Acta crystallographica. Section C, Crystal structure communications, 1997, Vol.53, p.956-959

1997

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1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

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1.3-mum InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

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0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

0.1 /spl mu/m enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT

0.1/spl mu/m InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DBIF)

0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology

0.1 /spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technology

0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

0.10 mu m graded InGaAs channel InP HEMT with 305 GHzf(T) and 340 GHz f(max)

0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max

0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

0663: Prognostic Factors and Immunochemical Study of Type I & Type II Endometrial Adenocarcinoma

1-(1-Pyrrolin-2-yl)-β-carbolines. Synthesis of Eudistomins H, I, and P

1,2,5-Thiadiazolidin-3-one 1,1-dioxide-based heterocyclic sulfides are potent inhibitors of human tryptase

1:27 PM, Abstract No. 40 - Experience using large volume detachable coils in the peripheral vasculature: preliminary results from the ACE multicenter study

1,2Aspirin-exacerbated respiratory disease involves a cysteinyl leukotriene-driven IL-33-mediated mast cell activation pathway

1,3‐Bis(3‐pyridylmethyl)‐2‐thiourea

1,3-Bis(3-pyridylmethyl)-2-thiourea

1,3-Diphenyl-2-tricyclo[3.3.1.13,7]dec-2-ylidenepropane-1,3-diimine, and its -1-imino-3-one and -1,3-dione Derivatives

1,3-diphenyl-2-tricyclo[3.3.1.13,7]dec-2-yl-idenepropane-1,3-diimine, and its -1-inlino-3-one and -1,3-dione derivatives

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

1.3-mum InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

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