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High-Performance Quasi-Two-Dimensional CsPbBr2.1Cl0.9:PEABr Perovskite Sky-Blue LEDs with an Interface Modification Layer

Nanoscale research letters, 2022-07, Vol.17 (1), p.66-66, Article 66

2022

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Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer

Molecules (Basel, Switzerland), 2022-11, Vol.27 (21), p.7596

2022

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Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

Materials, 2021-11, Vol.14 (21), p.6699

2021

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Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

Crystals (Basel), 2022-08, Vol.12 (8), p.1082

2022

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Epoxy Molding Compound Lead Frames With Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes

IEEE access, 2021, Vol.9, p.129874-129880

2021

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Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar (112¯2) AlGaN films

Applied surface science, 2023-01, Vol.608, p.155262, Article 155262

2023

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Effects of Cp2Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Optical materials, 2024-06, Vol.152, p.115494, Article 115494

2024

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Observation of Highly Durable Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes

Applied sciences, 2021-10, Vol.11 (19), p.9278

2021

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Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Materials science in semiconductor processing, 2023-06, Vol.160, p.107447, Article 107447

2023

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Quasi-two-dimensional Cs0.9Rb0.1PbBr2.1Cl0.9:PEABr sky-blue light-emitting diodes by potassium bromide doping engineering and interface modification in nickel oxide

Materials science in semiconductor processing, 2024-03, Vol.171, p.108030, Article 108030

2024

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Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

Applied physics letters, 2010-11, Vol.97 (18), p.181108-181108-3

2010

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Effects of V/Ⅲ ratio on structural, optical, and electrical properties of semi-polar high Al-content Si-doped n-AlGaN epi-layers

Materials science in semiconductor processing, 2022-11, Vol.151, p.107002, Article 107002

2022

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Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts

Microelectronics and reliability, 2012-05, Vol.52 (5), p.884-888

2012

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Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

Crystal research and technology (1979), 2010-07, Vol.45 (7), p.703-706

2010

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High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes

Japanese Journal of Applied Physics, 2010-02, Vol.49 (2), p.021004-021004-3

2010

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Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.119-124

2010

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Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Microelectronics and reliability, 2010-05, Vol.50 (5), p.679-682

2010

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Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes

International journal of photoenergy, 2012-01, Vol.2012, p.1-5

2012

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Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

ACS applied electronic materials, 2021-09, Vol.3 (9), p.4121-4125

2021

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Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps

Microelectronics and reliability, 2010-05, Vol.50 (5), p.683-687

2010

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Observation of Fabry-Pérot-type surface plasmon on Ag film with perforated short-range 3 × 3 hole array arranged in long-range periodic structure

Applied physics letters, 2007-06, Vol.90 (25), p.253106-253106-3

2007

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Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts: Reliability of High-Power LED Packaging and Assembly

Microelectronics and reliability, 2012, Vol.52 (5), p.884-888

2012

Volltextzugriff (PDF)

Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount : Light-emitting diodes

IEEE transactions on electron devices, 2010, Vol.57 (1), p.119-124

2010

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Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps: 2009 International Electron Devices and Materials Symposium (IEDMS)

Microelectronics and reliability, 2010, Vol.50 (5), p.683-687

2010

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Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs: 2009 International Electron Devices and Materials Symposium (IEDMS)

Microelectronics and reliability, 2010, Vol.50 (5), p.679-682

2010

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High-Performance Quasi-Two-Dimensional CsPbBr2.1Cl0.9:PEABr Perovskite Sky-Blue LEDs with an Interface Modification Layer

Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer

Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

Epoxy Molding Compound Lead Frames With Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar (112¯2) AlGaN films

Effects of Cp2Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Observation of Highly Durable Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Quasi-two-dimensional Cs0.9Rb0.1PbBr2.1Cl0.9:PEABr sky-blue light-emitting diodes by potassium bromide doping engineering and interface modification in nickel oxide

Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

Effects of V/Ⅲ ratio on structural, optical, and electrical properties of semi-polar high Al-content Si-doped n-AlGaN epi-layers

Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes

Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes

Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps

Observation of Fabry-Pérot-type surface plasmon on Ag film with perforated short-range 3 × 3 hole array arranged in long-range periodic structure

Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts: Reliability of High-Power LED Packaging and Assembly

Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount : Light-emitting diodes

Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps: 2009 International Electron Devices and Materials Symposium (IEDMS)

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs: 2009 International Electron Devices and Materials Symposium (IEDMS)

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