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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Journal of applied physics, 2017-09, Vol.122 (11)

2017

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Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10), p.n/a

2017

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Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3

Journal of physics. D, Applied physics, 2020-07, Vol.53 (27)

2020

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Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

APL materials, 2018-09, Vol.6 (9), p.096102-096102-10

2018

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Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn)

Journal of physics. D, Applied physics, 2023-07, Vol.56 (30)

2023

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Optimization of the Transient Characteristics of the Rectifiers under High-Energy Electron Irradiation

Instruments and experimental techniques (New York), 2024-06, Vol.67 (3), p.587-592

2024

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Journal of physics. D, Applied physics, 2020-10, Vol.53 (44), p.445111

2020

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Laser ion source for semiconductor applications

Journal of physics. Conference series, 2022-04, Vol.2244 (1), p.12096

2022

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Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Journal of physics. Conference series, 2017-05, Vol.830 (1), p.12152

2017

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Effect of Proton Irradiation on the Optical Properties and Defect Formation in Gd3AlxGa5 – xO12 (x = 2, 3) Crystals

Surface investigation, x-ray, synchrotron and neutron techniques, 2024-02, Vol.18 (1), p.58-62

2024

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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Journal of alloys and compounds, 2020-12, Vol.845, p.156269, Article 156269

2020

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Effect of Electron Irradiation on the Optical Properties of Gadolinium-Aluminum-Gallium Garnet Crystals

Surface investigation, x-ray, synchrotron and neutron techniques, 2021-11, Vol.15 (6), p.1259-1263

2021

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Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

Journal of physics. Conference series, 2016-09, Vol.747 (1), p.12085

2016

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Comparison of the Helium Porosity Parameters in Vanadium Alloy TEM Samples Prepared by Various Techniques

Russian metallurgy Metally, 2020-03, Vol.2020 (3), p.206-211

2020

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Features of Gas Porosity Formation Along Helium Ion Trajectories in Vanadium Alloys

Atomic energy (New York, N.Y.), 2019-05, Vol.126 (1), p.46-51

2019

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Development of Gas Porosity along the Ion Range in Vanadium Alloys during Sequential Helium and Hydrogen Ion Irradiation

Russian metallurgy Metally, 2019-11, Vol.2019 (11), p.1161-1166

2019

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Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

ECS journal of solid state science and technology, 2017, Vol.6 (10), p.Q127-Q131

2017

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HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM

High temperature material processes, 2019, Vol.23 (1), p.57-70

2019

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Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Journal of alloys and compounds, 2023-06, Vol.945, p.169258, Article 169258

2023

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Applied physics letters, 2018-08, Vol.113 (9)

2018

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Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-05, Vol.41 (3)

2023

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Ore hardness properties evaluation based on industrial comminution circuits surveys

Eurasian Mining, 2022-01, p.54-57

2022

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Carrier removal rates in 1.1 MeV proton irradiated α-Ga 2 O 3 (Sn)

Journal of physics. D, Applied physics, 2023-07, Vol.56 (30), p.305103

2023

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1 GeV proton damage in β-Ga2O3

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3

Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn)

Optimization of the Transient Characteristics of the Rectifiers under High-Energy Electron Irradiation

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Laser ion source for semiconductor applications

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Effect of Proton Irradiation on the Optical Properties and Defect Formation in Gd3AlxGa5 – xO12 (x = 2, 3) Crystals

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Effect of Electron Irradiation on the Optical Properties of Gadolinium-Aluminum-Gallium Garnet Crystals

Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

Comparison of the Helium Porosity Parameters in Vanadium Alloy TEM Samples Prepared by Various Techniques

Features of Gas Porosity Formation Along Helium Ion Trajectories in Vanadium Alloys

Development of Gas Porosity along the Ion Range in Vanadium Alloys during Sequential Helium and Hydrogen Ion Irradiation

Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM

Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Ore hardness properties evaluation based on industrial comminution circuits surveys

Carrier removal rates in 1.1 MeV proton irradiated α-Ga 2 O 3 (Sn)

1 GeV proton damage in β-Ga2O3

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