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Multiple Bit Upsets and Error Mitigation in Ultra-Deep Submicron SRAMS

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3288-3294

2008

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Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1903-1925

Lacoe, R.C.

2008

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Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1989-2000

1997

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Application of hardness-by-design methodology to radiation-tolerant ASIC technologies

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2334-2341

2000

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Dose-rate sensitivity of modern nMOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2602-2608

2005

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Reliability enhancement in high-performance MOSFETs by annular transistor design

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3615-3620

2004

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Space charge limited degradation of bipolar oxides at low electric fields

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2339-2351

1998

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Moderated degradation enhancement of lateral pnp transistors due to measurement bias

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2644-2648

1998

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Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2281-2288

2000

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A single event latchup suppression technique for COTS CMOS ICs

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2219-2224

2003

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Observation of nonlinear electrical transport at the onset of a Peierls transition in an organic conductor

Physical review letters, 1985-11, Vol.55 (21), p.2351-2354

1985

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Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3059-3066

2002

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Low frequency 1/f noise measurements in YBa2Cu3O7 thin films and the implications for HTS IR detectors

IEEE transactions on magnetics, 1991-03, Vol.27 (2), p.2832-2835

1991

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Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2662-2666

2002

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Nonlinear electrical transport effects in tetrathiafulvalene-tetracyanoquinodimethane as driven through charge-density-wave commensurability

Physical review letters, 1987-01, Vol.58 (3), p.262-265

1987

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Total dose hardness of three commercial CMOS microelectronics foundries

IEEE transactions on nuclear science, 1998-06, Vol.45 (3), p.1458-1463

1998

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Deposition of barium potassium bismuth oxide (BKBO) thin films by laser ablation

IEEE transactions on applied superconductivity, 1993-03, Vol.3 (1), p.1563-1566

1993

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Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices

Microelectronics and reliability, 2001-05, Vol.41 (5), p.649-660

2001

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Energy-dispersive x-ray diffraction with synchrotron radiation at cryogenic temperatures

Review of scientific instruments, 1984-06, Vol.55 (6), p.849-855

1984

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The effect of pressure on anion ordering in (TMTSF)2BF4

Synthetic metals, 1986-09, Vol.15 (4), p.289-298

1986

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New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1747-1754

1997

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Hall effect study of the field-induced instabilities in (TMTSF)2PF6 under pressure

Journal of physics. C, Solid state physics, 1986-08, Vol.19 (23), p.4483-4491

1986

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Electronic noise properties of barium potassium bismuth oxide (BKBO) thin films

IEEE transactions on applied superconductivity, 1993-03, Vol.3 (1), p.2940-2943

1993

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Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

MRS proceedings, 1996, Vol.428, Article 219

1996

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Metal-insulator transitions and superconductivity in ditetramethyltetraselenafulvalenium fluorosulfonate [ ( TMTSF ) 2 FS O 3 ]

Physical review. B, Condensed matter, 1983-02, Vol.27 (3), p.1947-1950

1983

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Multiple Bit Upsets and Error Mitigation in Ultra-Deep Submicron SRAMS

Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

Application of hardness-by-design methodology to radiation-tolerant ASIC technologies

Dose-rate sensitivity of modern nMOSFETs

Reliability enhancement in high-performance MOSFETs by annular transistor design

Space charge limited degradation of bipolar oxides at low electric fields

Moderated degradation enhancement of lateral pnp transistors due to measurement bias

Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

A single event latchup suppression technique for COTS CMOS ICs

Observation of nonlinear electrical transport at the onset of a Peierls transition in an organic conductor

Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures

Low frequency 1/f noise measurements in YBa2Cu3O7 thin films and the implications for HTS IR detectors

Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

Nonlinear electrical transport effects in tetrathiafulvalene-tetracyanoquinodimethane as driven through charge-density-wave commensurability

Total dose hardness of three commercial CMOS microelectronics foundries

Deposition of barium potassium bismuth oxide (BKBO) thin films by laser ablation

Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices

Energy-dispersive x-ray diffraction with synchrotron radiation at cryogenic temperatures

The effect of pressure on anion ordering in (TMTSF)2BF4

New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Hall effect study of the field-induced instabilities in (TMTSF)2PF6 under pressure

Electronic noise properties of barium potassium bismuth oxide (BKBO) thin films

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

Metal-insulator transitions and superconductivity in ditetramethyltetraselenafulvalenium fluorosulfonate [ ( TMTSF ) 2 FS O 3 ]

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