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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

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Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1520-1522

2010

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Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1450-1455

2013

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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1491-1495

2013

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Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1366-1369

2008

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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2184-2187

2012

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Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1375-1380

2013

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Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1845-1849

2011

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Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1639-1642

2007

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Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1548-1553

2010

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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1630-1633

2007

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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Microelectronics and reliability, 2017-09, Vol.76-77, p.350-356

2017

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Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Microelectronics and reliability, 2023-11, Vol.150, p.115110, Article 115110

2023

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Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1688-1691

2010

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Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

Microelectronics and reliability, 2019-09, Vol.100-101, p.113358, Article 113358

2019

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AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1725-1730

2006

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Dialogues autour du patrimoine: L’histoire, un enjeu de communication ?

2023

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Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1548-1553

2017

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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1361-1368

2004

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Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

Solid-state electronics, 2005-06, Vol.49 (6), p.956-964

2005

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Molecular phylogeny of the fern genus Elaphoglossum (Elaphoglossaceae) based on chloroplast non-coding DNA sequences: contributions of species from the Indian Ocean area

Molecular phylogenetics and evolution, 2004-12, Vol.33 (3), p.745-763

2004

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Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1611-1616

2005

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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4B.4-1-4B.4-9

2018

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Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1672-1676

2015

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On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1387-1392

2004

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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques

Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing

Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Dialogues autour du patrimoine: L’histoire, un enjeu de communication ?

Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

Molecular phylogeny of the fern genus Elaphoglossum (Elaphoglossaceae) based on chloroplast non-coding DNA sequences: contributions of species from the Indian Ocean area

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise

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