UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Monolithic integration of InP-based transistors on Si substrates using MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1979-1983

2009

Volltextzugriff (PDF)

Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO

Applied surface science, 2004-09, Vol.236 (1-4), p.387-393

2004

Volltextzugriff (PDF)

ZnO nanowire growth and devices

Materials science & engineering. R, Reports : a review journal, 2004-12, Vol.47 (1), p.1-47

2004

Volltextzugriff (PDF)

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

IEEE electron device letters, 2001-03, Vol.22 (3), p.113-115

2001

Volltextzugriff (PDF)

Pt ∕ ZnO nanowire Schottky diodes

Applied physics letters, 2004-10, Vol.85 (15), p.3107-3109

2004

Volltextzugriff (PDF)

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

Solid-state electronics, 2000-09, Vol.44 (9), p.1515-1521

2000

Volltextzugriff (PDF)

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1113-1116

2009

Volltextzugriff (PDF)

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

Solid-state electronics, 2004, Vol.48 (1), p.193-196

2004

Volltextzugriff (PDF)

Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.100-104

2009

Volltextzugriff (PDF)

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

2009 IEEE International SOI Conference, 2009, p.1-2

2009

Volltextzugriff (PDF)

GaN/AlGaN HBT fabrication

Solid-state electronics, 2000-02, Vol.44 (2), p.239-244

2000

Volltextzugriff (PDF)

W-band metamorphic HEMT with 267 mW output power

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.843-846

2005

Volltextzugriff (PDF)

2.6 A, 0.69 MW cm −2 single-chip bulk GaN p-i-n rectifier

Solid-state electronics, 2004-02, Vol.48 (2), p.359-361

2004

Volltextzugriff (PDF)

MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-3

2008

Volltextzugriff (PDF)

Implanted p– n junctions in GaN

Solid-state electronics, 1999, Vol.43 (7), p.1235-1238

1999

Volltextzugriff (PDF)

The Oxide/Nitride Interface: a study for gate dielectrics and field passivation

MRS proceedings, 2003, Vol.786, Article E8.5

2003

Volltextzugriff (PDF)

Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors

Solid-state electronics, 2000-12, Vol.44 (12), p.2117-2122

2000

Volltextzugriff (PDF)

Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

Microelectronics, 2005-08, Vol.36 (8), p.705-711

2005

Volltextzugriff (PDF)

Device Processing for GaN High Power Electronics

MRS proceedings, 2000, Vol.622, Article T7.1.1

2000

Volltextzugriff (PDF)

Monolithic III-V/Si integration

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.1421-1424

2008

Volltextzugriff (PDF)

First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2000, p.147-148

2000

Volltextzugriff (PDF)

Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

2003 International Symposium on Compound Semiconductors, 2003, p.123-124

2003

Volltextzugriff (PDF)

High prevalence of familial and genetic disease in children with cardiomyopathies: baseline paediatric data from the ESC EORP Cardiomyopathy and Myocarditis registry

European heart journal, 2020-11, Vol.41 (Supplement_2)

2020

Volltextzugriff (PDF)

Baseline features and management in adult and pediatric clinically suspected and biopsy-proven myocarditis in the cardiomyopathy and myocarditis long-term EORP registry

European heart journal, 2020-11, Vol.41 (Supplement_2)

2020

Volltextzugriff (PDF)

Longitudinal in vivo micro-CT assessment in osteopenic women demonstrated that risedronate reduced the deterioration of cortical bone

Bone (New York, N.Y.), 2010-06, Vol.47, p.S35-S35

2010

Volltextzugriff (PDF)

1 – 25 von 32

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(22)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(24)
Tagungsberichte
(8)

Sprache

Englisch
(30)
Französisch
(2)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Monolithic integration of InP-based transistors on Si substrates using MBE

Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO

ZnO nanowire growth and devices

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Pt ∕ ZnO nanowire Schottky diodes

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

GaN/AlGaN HBT fabrication

W-band metamorphic HEMT with 267 mW output power

2.6 A, 0.69 MW cm −2 single-chip bulk GaN p-i-n rectifier

MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE

Implanted p– n junctions in GaN

The Oxide/Nitride Interface: a study for gate dielectrics and field passivation

Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors

Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

Device Processing for GaN High Power Electronics

Monolithic III-V/Si integration

First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor

Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

High prevalence of familial and genetic disease in children with cardiomyopathies: baseline paediatric data from the ESC EORP Cardiomyopathy and Myocarditis registry

Baseline features and management in adult and pediatric clinically suspected and biopsy-proven myocarditis in the cardiomyopathy and myocarditis long-term EORP registry

Longitudinal in vivo micro-CT assessment in osteopenic women demonstrated that risedronate reduced the deterioration of cortical bone

Suchergebnisse filtern