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Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2259-2266

2008

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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3394-3400

2008

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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3499-3504

2009

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SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3217-3222

2006

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Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2904-2910

2011

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Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4457-4463

2013

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Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.898-903

2007

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Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3280-3284

2009

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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3078-3084

2009

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Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2831-2836

2012

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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2182-2188

2005

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A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

IEEE transactions on nuclear science, 2009-04, Vol.56 (2), p.366-374

2009

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TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for SDRAM Single-Event Evaluation

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3334-3340

2009

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The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3138-3144

2009

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Radiation Test Challenges for Scaled Commercial Memories

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2174-2180

2008

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Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.622-634

2003

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Laser-Induced Latchup Screening and Mitigation in CMOS Devices

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1819-1824

2006

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Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2171-2178

2009

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Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20- mu m SiGe heterojunction bipolar transistors and circuits

IEEE transactions on nuclear science, 2003-12, Vol.50 (6)

2003

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Evidence for angular effects in proton-induced single-event upsets

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3038-3044

2002

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Effects of heavy ion exposure on nanocrystal nonvolatile memory

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2366-2371

2005

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Performance of the high-energy single-event effects test Facility (SEETF) at Michigan State university's national Superconducting Cyclotron laboratory (NSCL)

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3664-3668

2004

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Energy dependence of proton damage in AlGaAs light-emitting diodes

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2492-2499

2000

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Proton-induced bit error studies in a 10 gb/s fiber optic link

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2736-2739

2004

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Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2202-2209

2001

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Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM

Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for SDRAM Single-Event Evaluation

The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices

Radiation Test Challenges for Scaled Commercial Memories

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Laser-Induced Latchup Screening and Mitigation in CMOS Devices

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20- mu m SiGe heterojunction bipolar transistors and circuits

Evidence for angular effects in proton-induced single-event upsets

Effects of heavy ion exposure on nanocrystal nonvolatile memory

Performance of the high-energy single-event effects test Facility (SEETF) at Michigan State university's national Superconducting Cyclotron laboratory (NSCL)

Energy dependence of proton damage in AlGaAs light-emitting diodes

Proton-induced bit error studies in a 10 gb/s fiber optic link

Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers

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