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Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

Applied physics letters, 2015-03, Vol.106 (13)

2015

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SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical review. B, Condensed matter and materials physics, 2012-12, Vol.86 (23), Article 235422

2012

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Oxygen Functionalities Evolution in Thermally Treated Graphene Oxide Featured by EELS and DFT Calculations

Journal of physical chemistry. C, 2017-03, Vol.121 (9), p.5408-5414

2017

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Electron energy-loss spectra of graphene oxide for the determination of oxygen functionalities

Carbon (New York), 2015-11, Vol.93, p.1034-1041

2015

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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Interaction between hydrogen flux and carbon monolayer on SiC(0001): graphene formation kinetics

Nanoscale, 2013-01, Vol.5 (2), p.671-68

2013

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N-type doping of Ge by As implantation and excimer laser annealing

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Role of basis sets on the unfolding of supercell band structures: From tight-binding to density functional theory

Europhysics letters, 2014-07, Vol.107 (2), p.27006-p1-27006-p6

2014

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Role of contact bonding on electronic transport in metal–carbon nanotube–metal systems

Nanotechnology, 2006-10, Vol.17 (20), p.5063-5072

2006

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Modeling of laser annealing

Journal of computational electronics, 2014-03, Vol.13 (1), p.70-94

2014

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Anomalous transport of Sb in laser irradiated Ge

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Combined Strategy to Realize Efficient Photoelectrodes for Low Temperature Fabrication of Dye Solar Cells

ACS applied materials & interfaces, 2014-05, Vol.6 (9), p.6425-6433

2014

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Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied surface science, 2014-02, Vol.291, p.53-57

2014

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Theoretical study of the laser annealing process in FinFET structures

Applied surface science, 2019-02, Vol.467-468, p.666-672

2019

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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of physics. D, Applied physics, 2021-11, Vol.54 (44), p.445107

2021

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Origin and impact of sublattice symmetry breaking in nitrogen-doped graphene

Physical review. B, Condensed matter and materials physics, 2014-03, Vol.89 (11), Article 115408

2014

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Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics

1, 2021

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A density functional theory study of epitaxial graphene on the (3×3)-reconstructed C-face of SiC

Applied physics letters, 2013-03, Vol.102 (9)

2013

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Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Journal of applied physics, 2018-03, Vol.123 (10)

2018

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Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere

Journal of physical chemistry. C, 2015-10, Vol.119 (39), p.22718-22723

2015

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Graphene integration with nitride semiconductors for high power and high frequency electronics

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235310

2012

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Innovative spongy TiO2 layers for gas detection at low working temperature

Sensors and actuators. B, Chemical, 2018-04, Vol.259, p.658-667

2018

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Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Oxygen Functionalities Evolution in Thermally Treated Graphene Oxide Featured by EELS and DFT Calculations

Electron energy-loss spectra of graphene oxide for the determination of oxygen functionalities

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Interaction between hydrogen flux and carbon monolayer on SiC(0001): graphene formation kinetics

N-type doping of Ge by As implantation and excimer laser annealing

Role of basis sets on the unfolding of supercell band structures: From tight-binding to density functional theory

Role of contact bonding on electronic transport in metal–carbon nanotube–metal systems

Modeling of laser annealing

Anomalous transport of Sb in laser irradiated Ge

Combined Strategy to Realize Efficient Photoelectrodes for Low Temperature Fabrication of Dye Solar Cells

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Theoretical study of the laser annealing process in FinFET structures

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Origin and impact of sublattice symmetry breaking in nitrogen-doped graphene

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics

A density functional theory study of epitaxial graphene on the (3×3)-reconstructed C-face of SiC

Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere

Graphene integration with nitride semiconductors for high power and high frequency electronics

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Innovative spongy TiO2 layers for gas detection at low working temperature

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