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Optimization of urea-EnFET based on Ta2O5 layer with post annealing

Sensors (Basel, Switzerland), 2011-05, Vol.11 (5), p.4562-4571

2011

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Optimization of a PVC Membrane for Reference Field Effect Transistors

Sensors (Basel, Switzerland), 2009-03, Vol.9 (3), p.2076-2087

2009

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Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Microelectronics and reliability, 2010-05, Vol.50 (5), p.738-741

2010

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Low cost and flexible electrodes with NH3 plasma treatments in extended gate field effect transistors for urea detection

Sensors and actuators. B, Chemical, 2013-10, Vol.187, p.274-279

2013

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pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process

Microelectronics and reliability, 2012-08, Vol.52 (8), p.1651-1654

2012

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LAPS with nanoscaled and highly polarized HfO2 by CF4 plasma for NH4+ detection

Sensors and actuators. B, Chemical, 2013-04, Vol.180, p.71-76

2013

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Nano-IGZO layer for EGFET in pH sensing characteristics

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.480-482

2013

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Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

Nanoscale research letters, 2012-03, Vol.7 (1), p.179-179, Article 179

2012

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Light Addressable Potentiometric Sensor with Fluorine-Terminated Hafnium Oxide Layer for Sodium Detection

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DL05-04DL05-4

2010

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Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DL10-04DL10-4

2010

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The characterization of stacked α-Si/SiGe/α-Si sensing membrane

Microelectronic engineering, 2005-06, Vol.80, p.46-49

2005

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LAPS with nanoscaled and highly polarized HfO2by CF4plasma for NH4+ detection

Sensors and actuators. B, Chemical, 2013-04, Vol.180, p.71-76

2013

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Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DL06-04DL06-5

2011

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New pH-sensitive TaO x N y membranes prepared by NH 3 plasma surface treatment and nitrogen incorporated reactive sputtering

Sensors and actuators. B, Chemical, 2008, Vol.130 (1), p.77-81

2008

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Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO 2 Membranes for pH Sensors

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4+ detection

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011, p.2118-2121

2011

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Single Si3N4 layer on dual substrate for pH sensing micro sensor

2009 IEEE Sensors Applications Symposium, 2009, p.61-64

2009

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Hysteresis effect on traps of Si sub(3)N sub(4) sensing membranes for pH difference sensitivity

Microelectronics and reliability, 2010-05, Vol.50 (5), p.738-741

2010

Volltextzugriff (PDF)

Effects of CF 4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO 2 Layer Grown by Atomic Layer Deposition

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

Volltextzugriff (PDF)

Effects of CF 4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO 2 Layer Grown by Atomic Layer Deposition

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

Volltextzugriff (PDF)

Hysteresis effect on traps of Si 3N 4 sensing membranes for pH difference sensitivity

Microelectronics and reliability, 2010, Vol.50 (5), p.738-741

2010

Volltextzugriff (PDF)

Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity: 2009 International Electron Devices and Materials Symposium (IEDMS)

Microelectronics and reliability, 2010, Vol.50 (5), p.738-741

2010

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Nitrogen effects on the sensitivity of tantalum nitride (Ta/sub x/N) for ion sensing devices

2004 IEEE International Conference on Semiconductor Electronics, 2004, p.4 pp.

2004

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Ion sensing improvements of hafnium oxide by nitrogen incorporation

2004 IEEE International Conference on Semiconductor Electronics, 2004, p.4 pp.

2004

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The surface site dehydration mechanism for Si/sub 3/N/sub 4/ sensing membrane by post-baking treatment

2004 IEEE International Conference on Semiconductor Electronics, 2004, p.4 pp.

2004

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Optimization of urea-EnFET based on Ta2O5 layer with post annealing

Optimization of a PVC Membrane for Reference Field Effect Transistors

Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Low cost and flexible electrodes with NH3 plasma treatments in extended gate field effect transistors for urea detection

pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process

LAPS with nanoscaled and highly polarized HfO2 by CF4 plasma for NH4+ detection

Nano-IGZO layer for EGFET in pH sensing characteristics

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

Light Addressable Potentiometric Sensor with Fluorine-Terminated Hafnium Oxide Layer for Sodium Detection

Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors

The characterization of stacked α-Si/SiGe/α-Si sensing membrane

LAPS with nanoscaled and highly polarized HfO2by CF4plasma for NH4+ detection

Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition

New pH-sensitive TaO x N y membranes prepared by NH 3 plasma surface treatment and nitrogen incorporated reactive sputtering

Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO 2 Membranes for pH Sensors

Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4+ detection

Single Si3N4 layer on dual substrate for pH sensing micro sensor

Hysteresis effect on traps of Si sub(3)N sub(4) sensing membranes for pH difference sensitivity

Effects of CF 4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO 2 Layer Grown by Atomic Layer Deposition

Effects of CF 4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO 2 Layer Grown by Atomic Layer Deposition

Hysteresis effect on traps of Si 3N 4 sensing membranes for pH difference sensitivity

Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity: 2009 International Electron Devices and Materials Symposium (IEDMS)

Nitrogen effects on the sensitivity of tantalum nitride (Ta/sub x/N) for ion sensing devices

Ion sensing improvements of hafnium oxide by nitrogen incorporation

The surface site dehydration mechanism for Si/sub 3/N/sub 4/ sensing membrane by post-baking treatment

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