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Intrinsic carrier concentration of narrow-gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap

Journal of applied physics, 1992-02, Vol.71 (3), p.1253-1258

1992

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Evidence of bandgap-narrowing in the space-charge layer of heavily doped silicon diodes

Electronics letters, 1984-02, Vol.20 (3), p.142-143

1984

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Hg1-xCdxTe characterization measurements: current practice and future needs

Semiconductor science and technology, 1993-06, Vol.8, p.753

1993

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Testing the accuracy of calculated equilibrium carrier concentrations in the presence of surface fields

Journal of applied physics, 1991-07, Vol.70 (1), p.236-242

1991

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Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment

Journal of electronic materials, 1993-08, Vol.22 (8), p.985-991

1993

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A model for the charge-pumping current based on small rectangular voltage pulses

Solid-state electronics, 1986-04, Vol.29 (4), p.447-460

1986

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Majority and minority electron and hole mobilities in heavily doped GaAs

Journal of applied physics, 1991-05, Vol.69 (10), p.7102-7110

1991

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Effect of band-gap narrowing on the built-in electric field in n-type silicon

Journal of applied physics, 1981-01, Vol.52 (2), p.1121-1123

1981

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Optical Dielectric Constant of Pb1-xSnxTe in the Narrow-Gap Region

Journal of applied physics, 1976-05, Vol.47 (5), p.1771-1774

1976

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The effect of electron-hole plasmas on the density of states of silicon and GaAs

Journal of applied physics, 1989-11, Vol.66 (9), p.4279-4283

LOWNEY, J. R

1989

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Impurity bands and band tailing in n-type GaAs

Journal of applied physics, 1986-10, Vol.60 (8), p.2854-2859

LOWNEY, J. R

1986

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Impurity bands and band tailing in moderately doped silicon

Journal of applied physics, 1986-03, Vol.59 (6), p.2048-2053

LOWNEY, J. R

1986

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Models for heavy doping effects in gallium arsenide

Journal of applied physics, 1987-07, Vol.62 (2), p.521-527

1987

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Application of multiscattering theory to impurity bands in Si:As

Journal of applied physics, 1988-11, Vol.64 (9), p.4544-4548

LOWNEY, J. R

1988

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A new technique for growing epitaxial films of Pb1−xSnxTe

Materials research bulletin, 1974-12, Vol.9 (12), p.1639-1646

1974

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Analysis of persistent photoconductivity due to potential barriers: Radiation/process induced defects

Journal of electronic materials, 1992, Vol.21 (7), p.731-736

1992

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Calcutated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment

Journal of applied physics, 1992, Vol.71 (5), p.2285-2296

1992

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Enhanced Interband Recombination in Pb1-xSnxTe

Journal of applied physics, 1975-01, Vol.46 (9), p.3965-3968

1975

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Characterization of interface defects in oxygen-implanted silicon films

Journal of electronic materials, 1993-02, Vol.22 (2), p.207-214

1993

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X-Ray lithography mask metrology: use of transmitted electrons in an SEM for linewidth measurement

Journal of research of the National Institute of Standards and Technology, 1993-07, Vol.98 (4), p.415-445

1993

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Hg 1-x Cd x Te characterization measurements: current practice and future needs

Semiconductor science and technology, 1993-06, Vol.8 (6S), p.753-776

1993

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Effects of doping-density gradients on band-gap narrowing in silicon and GaAs devices

Journal of applied physics, 1989-06, Vol.65 (12), p.4823-4827

1989

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Lattice relaxation in silicon doped with 4d and 5d transition metals

Journal of applied physics, 1988-11, Vol.64 (9), p.4538-4543

1988

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Physics for numerical simulation of silicon and gallium arsenide transistors: Material and process characterizeation for semiconductor device simulation

Solid-state electronics, 1990, Vol.33 (6), p.675-691

1990

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Persistent photoconductivity in SIMOX film structures

Journal of applied physics, 1990-10, Vol.68 (7), p.3456-3460

1990

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Intrinsic carrier concentration of narrow-gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap

Evidence of bandgap-narrowing in the space-charge layer of heavily doped silicon diodes

Hg1-xCdxTe characterization measurements: current practice and future needs

Testing the accuracy of calculated equilibrium carrier concentrations in the presence of surface fields

Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment

A model for the charge-pumping current based on small rectangular voltage pulses

Majority and minority electron and hole mobilities in heavily doped GaAs

Effect of band-gap narrowing on the built-in electric field in n-type silicon

Optical Dielectric Constant of Pb1-xSnxTe in the Narrow-Gap Region

The effect of electron-hole plasmas on the density of states of silicon and GaAs

Impurity bands and band tailing in n-type GaAs

Impurity bands and band tailing in moderately doped silicon

Models for heavy doping effects in gallium arsenide

Application of multiscattering theory to impurity bands in Si:As

A new technique for growing epitaxial films of Pb1−xSnxTe

Analysis of persistent photoconductivity due to potential barriers: Radiation/process induced defects

Calcutated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment

Enhanced Interband Recombination in Pb1-xSnxTe

Characterization of interface defects in oxygen-implanted silicon films

X-Ray lithography mask metrology: use of transmitted electrons in an SEM for linewidth measurement

Hg 1-x Cd x Te characterization measurements: current practice and future needs

Effects of doping-density gradients on band-gap narrowing in silicon and GaAs devices

Lattice relaxation in silicon doped with 4d and 5d transition metals

Physics for numerical simulation of silicon and gallium arsenide transistors: Material and process characterizeation for semiconductor device simulation

Persistent photoconductivity in SIMOX film structures

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