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Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels

Electronics letters, 2010-10, Vol.46 (22), p.1522-1523

2010

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InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p +/n +/p camel-like gate structure

Electronics letters, 2009-05, Vol.45 (11), p.572-573

2009

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Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.204-210

2005

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Integration of n-and p-channel Ingap/InGaAs doped-channel pseudomorphic HFETs

Electronics letters, 2007-06, Vol.43 (13), p.732-734

2007

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InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

IEEE electron device letters, 2006-12, Vol.27 (12), p.948-950

2006

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The influence of base bias on the collector photocurrent for InGaP ∕ GaAs heterojunction phototransistors

Journal of applied physics, 2005-02, Vol.97 (3), p.034502-034502-7

2005

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InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

European physical journal. Applied physics, 2009-11, Vol.48 (2), p.20303

2009

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Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes

Semiconductor science and technology, 2005-06, Vol.20 (6), p.548-554

2005

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Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications

Semiconductor science and technology, 2004-11, Vol.19 (11), p.1213-1219

2004

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Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate

Semiconductor science and technology, 2007-02, Vol.22 (2), p.35-42

2007

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Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

Semiconductor science and technology, 2007-02, Vol.22 (2), p.119-124

2007

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Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors

Semiconductor science and technology, 2007-03, Vol.22 (3), p.263-269, Article 263

2007

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Sub-0.5-μm gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass

Semiconductor science and technology, 2004-02, Vol.19 (2), p.167-171

2004

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Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Semiconductor science and technology, 2004-03, Vol.19 (3), p.384-388

2004

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New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

IEEE electron device letters, 1999-06, Vol.20 (6), p.304-306

1999

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Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors

Semiconductor science and technology, 1998-07, Vol.13 (7), p.796-800

1998

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Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications

Semiconductor science and technology, 2002-02, Vol.17 (2), p.156-160

2002

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Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

Semiconductor science and technology, 2001-10, Vol.16 (10), p.826-830

2001

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Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs δ-doped single heterojunction bipolar transistors using an InGaP passivation layer

Semiconductor science and technology, 1998-08, Vol.13 (8), p.847-851

1998

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GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles

Electronics letters, 2009, Vol.45 (4), p.231-233

2009

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Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Semiconductor science and technology, 2001-04, Vol.16 (4), p.191-196, Article 191

2001

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Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

Semiconductor science and technology, 2008-12, Vol.23, p.125014

2008

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Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels

Semiconductor science and technology, 1997-10, Vol.12 (10), p.1210-1216

1997

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High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)

IEEE transactions on electron devices, 1997-02, Vol.44 (2), p.346-348

Lour, W.-S.

1997

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Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

Semiconductor science and technology, 1999-10, Vol.14 (10), p.887-891

1999

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Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels

InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p +/n +/p camel-like gate structure

Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation

Integration of n-and p-channel Ingap/InGaAs doped-channel pseudomorphic HFETs

InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

The influence of base bias on the collector photocurrent for InGaP ∕ GaAs heterojunction phototransistors

InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes

Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications

Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate

Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors

Sub-0.5-μm gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors

Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications

Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs δ-doped single heterojunction bipolar transistors using an InGaP passivation layer

GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles

Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels

High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)

Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

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