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P-type doping and devices based on ZnO

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.624-630

2004

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Stable highly conductive ZnO via reduction of Zn vacancies

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory

Physical review letters, 2013-02, Vol.110 (5), p.055502-055502, Article 055502

2013

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Recent advances in ZnO materials and devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.383-387

Look, D.C.

2001

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Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy

Applied physics letters, 2002-09, Vol.81 (10), p.1830-1832

2002

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The future of ZnO light emitters

Physica status solidi. A, Applied research, 2004-08, Vol.201 (10), p.2203-2212

2004

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Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Applied physics letters, 2003-12, Vol.83 (23), p.4719-4721

2003

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Applied physics letters, 2005-07, Vol.87 (1), p.012102-012102-3

2005

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Fine structure on the green band in ZnO

Journal of applied physics, 2001-06, Vol.89 (11), p.6189-6191

2001

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Persistent n-type photoconductivity in p-type ZnO

Journal of crystal growth, 2006-01, Vol.287 (1), p.16-22

2006

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Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Applied physics letters, 2003-10, Vol.83 (14), p.2943-2945

2003

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Quantitative analysis of surface donors in ZnO

Surface science, 2007-12, Vol.601 (23), p.5315-5319

Look, D.C.

2007

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Radiation hardness of ZnO at low temperatures

Semiconductor science and technology, 2004-06, Vol.19 (6), p.752-754

2004

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As-doped p-type ZnO produced by an evaporation∕sputtering process

Applied physics letters, 2004-11, Vol.85 (22), p.5269-5271

2004

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Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

AIP advances, 2016-09, Vol.6 (9), p.095004-095004-10

2016

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The path to ZnO devices: donor and acceptor dynamics

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.171-177

2003

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Deep level characteristics in n-GaN with inductively coupled plasma damage

Journal of physics. D, Applied physics, 2008-08, Vol.41 (15), p.155314-155314 (4)

2008

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Identification of donors, acceptors, and traps in bulk-like HVPE GaN

Journal of crystal growth, 2005-07, Vol.281 (1), p.143-150

2005

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Optically pumped ultraviolet lasing from ZnO

Solid state communications, 1996, Vol.99 (12), p.873-875

1996

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Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Applied physics letters, 2005-04, Vol.86 (15), p.151917-151917-3

2005

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Traps in AlGaN ∕ GaN ∕ SiC heterostructures studied by deep level transient spectroscopy

Applied physics letters, 2005-10, Vol.87 (18), p.182115-182115-3

2005

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Electrical characterization of 1.8 MeV proton-bombarded ZnO

Applied physics letters, 2001-11, Vol.79 (19), p.3074-3076

2001

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Process dependence of H passivation and doping in H-implanted ZnO

Journal of physics. D, Applied physics, 2013-02, Vol.46 (5), p.55107-1-7

2013

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Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2000-12, Vol.77 (23), p.3761-3763

2000

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Electrical properties of bulk ZnO

Solid state communications, 1998-02, Vol.105 (6), p.399-401

1998

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P-type doping and devices based on ZnO

Stable highly conductive ZnO via reduction of Zn vacancies

Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory

Recent advances in ZnO materials and devices

Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy

The future of ZnO light emitters

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Fine structure on the green band in ZnO

Persistent n-type photoconductivity in p-type ZnO

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Quantitative analysis of surface donors in ZnO

Radiation hardness of ZnO at low temperatures

As-doped p-type ZnO produced by an evaporation∕sputtering process

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

The path to ZnO devices: donor and acceptor dynamics

Deep level characteristics in n-GaN with inductively coupled plasma damage

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

Optically pumped ultraviolet lasing from ZnO

Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Traps in AlGaN ∕ GaN ∕ SiC heterostructures studied by deep level transient spectroscopy

Electrical characterization of 1.8 MeV proton-bombarded ZnO

Process dependence of H passivation and doping in H-implanted ZnO

Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

Electrical properties of bulk ZnO

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