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Bragg Resonances in a Yttrium Iron Garnet–Platinum–Yttrium Iron Garnet Layered Structure

Bulletin of the Russian Academy of Sciences. Physics, 2024-02, Vol.88 (2), p.254-259

2024

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Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1357-1362

2019

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All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

Applied physics letters, 2022-12, Vol.121 (23)

2022

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Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures

JETP letters, 2010-09, Vol.92 (5), p.305-309

2010

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Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Journal of applied physics, 2023-12, Vol.134 (21)

2023

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Mechanism of Band Gap Formation in the Spin-Wave Spectrum of Coupled Magnon Crystals

JETP letters, 2022-06, Vol.115 (12), p.742-748

2022

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Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Applied physics letters, 2021-04, Vol.118 (15)

2021

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Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Scientific reports, 2018-06, Vol.8 (1), p.9454-8, Article 9454

2018

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Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.231-237

2024

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014029

2011

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Microscopic and optical investigation of Ge nanoislands on silicon substrates

Nanotechnology, 2002-02, Vol.13 (1), p.81-85

2002

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Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1537-1541

2017

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Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.261-265

2016

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Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band

JETP letters, 2011-09, Vol.94 (1), p.63-67

2011

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Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1511-1514

2016

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Spin current for tuning the band gaps of spin waves

Journal of magnetism and magnetic materials, 2023-12, Vol.588, p.171418, Article 171418

2023

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Bragg resonances in sandwich magnonic crystals with non-identical periods

Journal of magnetism and magnetic materials, 2023-10, Vol.584, p.171051, Article 171051

2023

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Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.466-469

2005

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Influence of nonlinearity on the Bragg resonances in coupled magnon crystals

Luchshie medit͡s︡inskie t͡s︡entry Moskvy, 2024

2024

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Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1065-1068

2003

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The elastic strain and composition of self-assembled GeSi islands on Si(001)

Thin solid films, 2000-05, Vol.367 (1-2), p.171-175

2000

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Bragg Resonances in a Yttrium Iron Garnet–Platinum–Yttrium Iron Garnet Layered Structure

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Mechanism of Band Gap Formation in the Spin-Wave Spectrum of Coupled Magnon Crystals

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Microscopic and optical investigation of Ge nanoislands on silicon substrates

Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Spin current for tuning the band gaps of spin waves

Bragg resonances in sandwich magnonic crystals with non-identical periods

Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Influence of nonlinearity on the Bragg resonances in coupled magnon crystals

Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures

The elastic strain and composition of self-assembled GeSi islands on Si(001)

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