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Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Applied physics letters, 2009-12, Vol.95 (23), p.233504-233504-3

2009

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Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1121-1126

2011

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Highly reliable a‐Si:H gate driver on array with complementary double‐sided noise‐eliminating and dual voltage levels for TFT‐LCD applications

Journal of the Society for Information Display, 2023-11, Vol.31 (11), p.638-650

2023

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TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology

Surface & coatings technology, 2018-11, Vol.354, p.169-174

2018

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Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

RSC advances, 2016-01, Vol.6 (18), p.16374-16379

2016

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Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1071-1076

2014

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Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

Advanced science, 2023-03, Vol.10 (9), p.e2205481-n/a

2023

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Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

Thin solid films, 2011-12, Vol.520 (5), p.1489-1494

2011

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The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Physica status solidi. A, Applications and materials science, 2018-03, Vol.215 (6), p.n/a

2018

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Nitrogenated amorphous InGaZnO thin film transistor

Applied physics letters, 2011-01, Vol.98 (5), p.052102-052102-3

2011

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Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

IEEE electron device letters, 2013-09, Vol.34 (9), p.1157-1159

2013

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Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

Journal of the Society for Information Display, 2019-01, Vol.27 (1), p.21-33

2019

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High‐reliability gate driver on array using noise sharing of precharging node for thin film transistor–liquid crystal display application

Journal of the Society for Information Display, 2020-12, Vol.28 (12), p.965-978

2020

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Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1578-1581

2016

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Stability study of indium tungsten oxide thin‐film transistors annealed under various ambient conditions

Physica status solidi. A, Applications and materials science, 2017-02, Vol.214 (2), p.np-n/a

2017

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Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors

RSC advances, 2016-01, Vol.6 (79), p.75693-75698

2016

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Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Advanced electronic materials, 2019-03, Vol.5 (3), p.n/a

2019

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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Applied physics letters, 2012-07, Vol.101 (5), p.52901

2012

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Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets

RSC advances, 2015-01, Vol.5 (64), p.51983-51989

2015

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Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

Applied physics letters, 2009-06, Vol.94 (24), p.242101-242101-3

2009

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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

Microelectronics and reliability, 2013-12, Vol.53 (12), p.1879-1885

2013

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Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3070

2021

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Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (40), p.6613-6622

2013

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Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

IEEE electron device letters, 2011-10, Vol.32 (10), p.1397-1399

2011

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Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy

Highly reliable a‐Si:H gate driver on array with complementary double‐sided noise‐eliminating and dual voltage levels for TFT‐LCD applications

TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Nitrogenated amorphous InGaZnO thin film transistor

Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

High‐reliability gate driver on array using noise sharing of precharging node for thin film transistor–liquid crystal display application

Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions

Stability study of indium tungsten oxide thin‐film transistors annealed under various ambient conditions

Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors

Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets

Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

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