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Insulator investigation on SiC for improved reliability

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.525-532

1999

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N2O Processing Improves the 4H-SiC:SiO2 Interface

Materials science forum, 2002-04, Vol.389-393, p.985-988

2002

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Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

Applied physics letters, 1999-03, Vol.74 (10), p.1448-1450

1999

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Improved oxidation procedures for reduced SiO2/SiC defects

Journal of electronic materials, 1996-05, Vol.25 (5), p.909-915

1996

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Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Materials science forum, 2004-01, Vol.457-460, p.689-692

2004

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Low Interface State Density Oxides on P-Type SiC

Materials science forum, 1998-01, Vol.264-268, p.853-856

1998

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Real‐Time Oxidation Monitoring with a Surface Charge Analyzer

Journal of the Electrochemical Society, 1993-08, Vol.140 (8), p.2328-2332

Lipkin, L. A.

1993

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Development of high-current 4H-SiC ACCUFET

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.471-478

2003

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High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Materials science forum, 2002-04, Vol.389-393, p.981-984

2002

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SiC device technology: remaining issues

Diamond and related materials, 1997-08, Vol.6 (10), p.1400-1404

1997

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Experimental characterization of electron-hole generation in silicon carbide

Journal of electronic materials, 1996-05, Vol.25 (5), p.899-907

1996

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4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Materials science forum, 2000-05, Vol.338-342, p.1275-1278

2000

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N sub 2 O processing improves the 4H-SiC:SiO sub 2 interface

Materials science forum, 2001-10, Vol.389-393 (2), p.985-988

2001

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Improved oxidation procedures for reduced SiO2/SiC defects: III-V Nitrides and silicon carbide

Journal of electronic materials, 1996, Vol.25 (5), p.909-915

1996

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High-current, NO-annealed lateral 4H-SiC MOSFETs

Materials science forum, 2001-10, Vol.389-393 (2), p.981-984

2001

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SiC Devices with ONO Stacked Dielectrics

Materials science forum, 2000-05, Vol.338-342, p.1093-1096

2000

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Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

MRS proceedings, 2000, Vol.640, Article H3.5

2000

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Experimental characterization of electron-hole generation in silicon carbide: III-V Nitrides and silicon carbide

Journal of electronic materials, 1996, Vol.25 (5), p.899-907

1996

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Use of tape recording during surgical interventions on the ear

Vestnik otorinolaringologii, 1979-03 (2), p.24

1979

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Demonstration of a 6H-SiC CMOS technology

1996 54th Annual Device Research Conference Digest, 1996, p.162-163

1996

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Insights from myalgic encephalomyelitis/chronic fatigue syndrome may help unravel the pathogenesis of postacute COVID-19 syndrome

Trends in molecular medicine, 2021-09, Vol.27 (9), p.895-906

2021

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Toll-Like Receptor 3 Signaling via TRIF Contributes to a Protective Innate Immune Response to Severe Acute Respiratory Syndrome Coronavirus Infection

mBio, 2015-05, Vol.6 (3), p.e00638-e00615

2015

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Impaired carbohydrate digestion and transport and mucosal dysbiosis in the intestines of children with autism and gastrointestinal disturbances

PloS one, 2011-09, Vol.6 (9), p.e24585-e24585

2011

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Metagenomic Survey of Microbes in Honey Bee Colony Collapse Disorder

Science (American Association for the Advancement of Science), 2007-10, Vol.318 (5848), p.283-287

2007

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ME/CFS and Long COVID share similar symptoms and biological abnormalities: road map to the literature

Frontiers in medicine, 2023-06, Vol.10, p.1187163-1187163

2023

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Insulator investigation on SiC for improved reliability

N2O Processing Improves the 4H-SiC:SiO2 Interface

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

Improved oxidation procedures for reduced SiO2/SiC defects

Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Low Interface State Density Oxides on P-Type SiC

Real‐Time Oxidation Monitoring with a Surface Charge Analyzer

Development of high-current 4H-SiC ACCUFET

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

SiC device technology: remaining issues

Experimental characterization of electron-hole generation in silicon carbide

4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

N sub 2 O processing improves the 4H-SiC:SiO sub 2 interface

Improved oxidation procedures for reduced SiO2/SiC defects: III-V Nitrides and silicon carbide

High-current, NO-annealed lateral 4H-SiC MOSFETs

SiC Devices with ONO Stacked Dielectrics

Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

Experimental characterization of electron-hole generation in silicon carbide: III-V Nitrides and silicon carbide

Use of tape recording during surgical interventions on the ear

Demonstration of a 6H-SiC CMOS technology

Insights from myalgic encephalomyelitis/chronic fatigue syndrome may help unravel the pathogenesis of postacute COVID-19 syndrome

Toll-Like Receptor 3 Signaling via TRIF Contributes to a Protective Innate Immune Response to Severe Acute Respiratory Syndrome Coronavirus Infection

Impaired carbohydrate digestion and transport and mucosal dysbiosis in the intestines of children with autism and gastrointestinal disturbances

Metagenomic Survey of Microbes in Honey Bee Colony Collapse Disorder

ME/CFS and Long COVID share similar symptoms and biological abnormalities: road map to the literature

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