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Simple model for time-dependent dielectric breakdown in inter- and intralevel low- k dielectrics

Journal of applied physics, 2005-10, Vol.98 (8), p.084109-084109-6

2005

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Relationship between interfacial adhesion and electromigration in Cu metallization

Journal of applied physics, 2003-02, Vol.93 (3), p.1417-1421

2003

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Reduced electromigration of Cu wires by surface coating

Applied physics letters, 2002-09, Vol.81 (10), p.1782-1784

2002

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Processing and moisture effects on TDDB for Cu/ULK BEOL structures

Microelectronic engineering, 2012-04, Vol.92, p.130-133

2012

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Effect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures

Thin solid films, 2006-08, Vol.513 (1-2), p.295-299

2006

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Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

Applied physics letters, 2003-08, Vol.83 (5), p.869-871

2003

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In situ study of void growth kinetics in electroplated Cu lines

Journal of applied physics, 2002-08, Vol.92 (4), p.1803-1810

2002

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The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1643-1647

2006

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Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets

Microelectronic engineering, 2012-04, Vol.92, p.9-14

2012

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56 nm pitch Cu dual-damascene interconnects with self-aligned via using negative-tone development Lithography-Etch-Lithography-Etch patterning scheme

Microelectronic engineering, 2013-07, Vol.107, p.138-144

2013

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Reduced Cu interface diffusion by CoWP surface coating

Microelectronic engineering, 2003-11, Vol.70 (2), p.406-411

2003

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Effect of liner thickness on electromigration lifetime

Journal of applied physics, 2003-06, Vol.93 (12), p.9576-9582

2003

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Electromigration Cu mass flow in Cu interconnections

Thin solid films, 2006-05, Vol.504 (1), p.274-278

2006

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Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Microelectronic engineering, 2012-04, Vol.92, p.9-14

2012

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Random loose packings of uniform spheres and the dilatancy onset

Physical review letters, 1990-05, Vol.64 (22), p.2727-2730

1990

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Polymeric Organic−Inorganic Hybrid Nanocomposites: Preparation of Polyimide-Modified Poly(silsesquioxane) Using Functionalized Poly(amic acid alkyl ester) Precursors

Macromolecules, 1997-12, Vol.30 (26), p.8512-8515

1997

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Moisture-driven crack growth in blanket low dielectric constant and ultralow dielectric constant films

Journal of applied physics, 2004-09, Vol.96 (6), p.3482-3485

2004

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Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

Microelectronic engineering, 2003-11, Vol.70 (2), p.398-405

2003

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Reliability Challenges with Ultra-Low k Interlevel Dielectrics

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1835-1841

2004

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Experimental study of nanoscale Co damascene BEOL interconnect structures

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.40-42

2016

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IEEE_Xplore

Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics

Review of scientific instruments, 2000-05, Vol.71 (5), p.1991-2000

2000

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Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines

Applied physics letters, 2000-06, Vol.76 (25), p.3726-3728

2000

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Towards an appropriate acceleration model for beol tddb

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.DI-5-1-DI-5-6

2016

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IEEE_Xplore

Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.222-228

2004

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IEEE_Xplore

Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2027-2032

2012

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IEEE_Xplore

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Simple model for time-dependent dielectric breakdown in inter- and intralevel low- k dielectrics

Relationship between interfacial adhesion and electromigration in Cu metallization

Reduced electromigration of Cu wires by surface coating

Processing and moisture effects on TDDB for Cu/ULK BEOL structures

Effect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures

Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

In situ study of void growth kinetics in electroplated Cu lines

The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets

56 nm pitch Cu dual-damascene interconnects with self-aligned via using negative-tone development Lithography-Etch-Lithography-Etch patterning scheme

Reduced Cu interface diffusion by CoWP surface coating

Effect of liner thickness on electromigration lifetime

Electromigration Cu mass flow in Cu interconnections

Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Random loose packings of uniform spheres and the dilatancy onset

Polymeric Organic−Inorganic Hybrid Nanocomposites: Preparation of Polyimide-Modified Poly(silsesquioxane) Using Functionalized Poly(amic acid alkyl ester) Precursors

Moisture-driven crack growth in blanket low dielectric constant and ultralow dielectric constant films

Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

Reliability Challenges with Ultra-Low k Interlevel Dielectrics

Experimental study of nanoscale Co damascene BEOL interconnect structures

Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics

Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines

Towards an appropriate acceleration model for beol tddb

Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

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