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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

Acta materialia, 2010, Vol.58 (12), p.4281-4291

2010

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A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.65-68

2024

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A 0.0043-mm ^ 0.085- \mu W/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-02, p.1-5

2023

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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248

2023

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A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.353-356

2020

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A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447

2019

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A 0.05mm2 0.6V 500kS/s 14.3fJ/conversion-step 11-bit two-step switching SAR ADC for 3-dimensional stacking CMOS imager

2012 IEEE Asian Solid State Circuits Conference (A-SSCC), 2012, p.165-168

2012

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A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

2011 Proceedings of the ESSCIRC (ESSCIRC), 2011, p.447-450

2011

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A 0.1–1.1 GHz inductorless differential LNA with double g m -boosting and positive feedback

Analog integrated circuits and signal processing, 2017-11, Vol.93 (2), p.205-215

2017

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A 0.1–1.1 GHz inductorless differential LNA with double gm-boosting and positive feedback

Analog integrated circuits and signal processing, 2017-11, Vol.93 (2), p.205-215

2017

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A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2021, p.1-3

2021

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A 0.1-20 GHz Low-Power Self-Biased Resistive-Feedback LNA in 90 nm Digital CMOS

IEEE microwave and wireless components letters, 2009-05, Vol.19 (5), p.323-325

2009

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A 0.1-6 GHz inductorless differential common gate LNA

2015 IEEE International Wireless Symposium (IWS 2015), 2015, p.1-4

2015

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A 0.13 [Formula Omitted]m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1454-1463

2009

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A 0.13 μm 8 Mb Logic-Based CuxSiyO ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

IEEE journal of solid-state circuits, 2013-05, Vol.48 (5), p.1315-1322

2013

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A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.563-566

2000

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A 0.13 \mu m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1454-1463

2009

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A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

IEEE journal of solid-state circuits, 2013-05, Vol.48 (5), p.1315-1322

2013

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A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

2012 Symposium on VLSI Circuits (VLSIC), 2012, p.42-43

2012

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La 0.14 V 2 O 5 /Reduced Graphene Oxide Composite for Aqueous Zinc−Ion Batteries with Long Cycle Life

Journal of the Electrochemical Society, 2021-08, Vol.168 (8), p.80527

2021

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0.14THz high speed data communication over 1.5 kilometers

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves, 2012, p.1-2

2012

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A 0.16nJ/bit/iteration 3.38mm2 turbo decoder chip for WiMAX/LTE standards

2011 International Symposium on Integrated Circuits, 2011, p.168-171

2011

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A 0.18-[Formula Omitted]m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 [Formula Omitted] EDR Applications

IEEE transactions on microwave theory and techniques, 2010-05, Vol.58 (5), p.1367

2010

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0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

ECS transactions, 2011, Vol.34 (1), p.173-181

2011

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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

A 0.0043-mm ^ 0.085- \mu W/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

A 0.05mm2 0.6V 500kS/s 14.3fJ/conversion-step 11-bit two-step switching SAR ADC for 3-dimensional stacking CMOS imager

A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

A 0.1–1.1 GHz inductorless differential LNA with double g m -boosting and positive feedback

A 0.1–1.1 GHz inductorless differential LNA with double gm-boosting and positive feedback

A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

A 0.1-20 GHz Low-Power Self-Biased Resistive-Feedback LNA in 90 nm Digital CMOS

A 0.1-6 GHz inductorless differential common gate LNA

A 0.13 [Formula Omitted]m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

A 0.13 μm 8 Mb Logic-Based CuxSiyO ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

A 0.13 \mu m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

La 0.14 V 2 O 5 /Reduced Graphene Oxide Composite for Aqueous Zinc−Ion Batteries with Long Cycle Life

0.14THz high speed data communication over 1.5 kilometers

A 0.16nJ/bit/iteration 3.38mm2 turbo decoder chip for WiMAX/LTE standards

A 0.18-[Formula Omitted]m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 [Formula Omitted] EDR Applications

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

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