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Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.365-369

2009

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Effectiveness of Autologous Fat Graft in Treating Fecal Incontinence

Annals of Coloproctolgy, 2019, 35(3), , pp.144-151

2019

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High-Voltage Schottky Barrier Diode on Silicon Substrate

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GF17-06GF17-4

2011

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High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.251-255

2011

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Effect of oxygen annealing temperature on AlGaN/GaN HEMTs

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.235-238

2011

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A new vertical GaN SBD employing in-situ metallic gallium ohmic contact

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.247-250

2011

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Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process

MRS proceedings, 2009-01, Vol.1167 (1), Article 1167-O05-06

2009

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New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2287

2007

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High voltage AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) employing oxygen annealing

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.233-236

2010

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Hot-Carrier-Stress-Induced Degradation of 1 kV AlGaN/GaN HEMTs by Employing SiO2 Passivation

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.129-132

2007

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High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.241-244

2008

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High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity

2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4

2006

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Early Experience With a Partial Stapled Hemorrhoidopexy for Treating Patients With Grades III-IV Prolapsing Hemorrhoids

Annals of Coloproctolgy, 2017, 33(1), , pp.28-34

2017

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Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement

Solid-state electronics, 2010-04, Vol.54 (4), p.405-409

2010

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New AlGaN/GaN HEMTs employing both a floating gate and a field plate

Physica scripta, 2010-11, Vol.2010, p.014009

2010

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Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AIGaN/GaN HEMTs

Materials science forum, 2010-01, Vol.645-648, p.1223-1226

2010

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Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

Materials science forum, 2010-04, Vol.645-648, p.1223-1226

2010

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High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment

Physica scripta, 2008-12, Vol.78 (6), p.065802

2008

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1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO 2 Passivation Layer

MRS proceedings, 2009, Vol.1167, Article 1167-O05-03

2009

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High-Voltage Schottky Barrier Diode on Silicon Substrate

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6

2011

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High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Materials science forum, 2009-01, Vol.615-617, p.971-974

2009

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SiO 2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2291

2007

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The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

Materials science forum, 2009, Vol.600-603, p.1337-1340

2009

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Suppression of Leakage Current of AlGaN/GaN HEMTs by HF Treatment

ECS transactions, 2009, Vol.25 (12), p.117-122

2009

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1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer

2008 IEEE Power Electronics Specialists Conference, 2008, p.88-91

2008

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Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation

Effectiveness of Autologous Fat Graft in Treating Fecal Incontinence

High-Voltage Schottky Barrier Diode on Silicon Substrate

High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

Effect of oxygen annealing temperature on AlGaN/GaN HEMTs

A new vertical GaN SBD employing in-situ metallic gallium ohmic contact

Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process

New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors

High voltage AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) employing oxygen annealing

Hot-Carrier-Stress-Induced Degradation of 1 kV AlGaN/GaN HEMTs by Employing SiO2 Passivation

High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation

High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity

Early Experience With a Partial Stapled Hemorrhoidopexy for Treating Patients With Grades III-IV Prolapsing Hemorrhoids

Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement

New AlGaN/GaN HEMTs employing both a floating gate and a field plate

Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AIGaN/GaN HEMTs

Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment

1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO 2 Passivation Layer

High-Voltage Schottky Barrier Diode on Silicon Substrate

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

SiO 2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

Suppression of Leakage Current of AlGaN/GaN HEMTs by HF Treatment

1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer

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