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A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

IEEE journal of solid-state circuits, 2011-01, Vol.46 (1), p.107-118

2011

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A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.340-342

2018

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A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

2022 IEEE International Solid-State Circuits Conference (ISSCC), 2022, Vol.65, p.448-450

2022

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A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

2011 IEEE International Solid-State Circuits Conference, 2011, p.498-500

2011

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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.434-435

2010

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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.218-220

2020

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A 4 ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3

IEEE journal of solid-state circuits, 2024-10, Vol.59 (10), p.3307-3316

2024

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An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.212-224

2021

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Characterization of Rotavirus Infection in Hospitalized Children under 5 with Acute Gastroenteritis 5 Years after Introducing the Rotavirus Vaccines in South Korea

Children (Basel), 2022-10, Vol.9 (11), p.1633

2022

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An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.121-131, Article 121

2008

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A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3

2023 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2023, p.1-3

2023

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Serum Alkaline Phosphatase Levels in 10-20 Year Old Healthy Korean Children and Adolescents - Based on the 2009 Korean National Health and Nutrition Examination Survey

Annals of pediatric endocrinology & metabolism, 2012, Vol.17 (1), p.39

2012

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An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.492-617

2007

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Morphologic factors of biliary trees are associated with gallstone-related biliary events

World journal of gastroenterology : WJG, 2015-01, Vol.21 (1), p.276-282

2015

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Design of a mobile robot system for automatic integrity evaluation of large size reservoirs and pipelines in industrial fields

Proceedings 2003 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS 2003) (Cat. No.03CH37453), 2003, Vol.3, p.2618-2623 vol.3

2003

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Development of mobile robot systems for automatic diagnosis of boiler tubes in fossil power plants and large size pipelines

IEEE/RSJ International Conference on Intelligent Robots and Systems, 2002, Vol.2, p.1880-1885 vol.2

2002

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1.55 µm Wavelength Strain-Compensated In x Ga 1-x As/In y Al 1-y As Electroabsorption Modulators with High Extinction Ratio and Low Polarization-Dependent Loss

Japanese Journal of Applied Physics, 2001-05, Vol.40 (5R), p.3120

2001

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1.55 mu m WAVELENGTH STRAIN-COMPENSATED InxGa1-xAs/InyAl1-yAs ELECTROABSORPTION MODULATORS WITH HIGH EXTINCTION RATIO AND LOW POLARIZATION-DEPENDENT LOSS

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 5A, pp. 3120-3123. 2001, 2001, Vol.40 (5A), p.3120-3123

2001

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A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

A 4 ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3

An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques

Characterization of Rotavirus Infection in Hospitalized Children under 5 with Acute Gastroenteritis 5 Years after Introducing the Rotavirus Vaccines in South Korea

An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion

A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3

Serum Alkaline Phosphatase Levels in 10-20 Year Old Healthy Korean Children and Adolescents - Based on the 2009 Korean National Health and Nutrition Examination Survey

An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion

Morphologic factors of biliary trees are associated with gallstone-related biliary events

Design of a mobile robot system for automatic integrity evaluation of large size reservoirs and pipelines in industrial fields

Development of mobile robot systems for automatic diagnosis of boiler tubes in fossil power plants and large size pipelines

1.55 µm Wavelength Strain-Compensated In x Ga 1-x As/In y Al 1-y As Electroabsorption Modulators with High Extinction Ratio and Low Polarization-Dependent Loss

1.55 mu m WAVELENGTH STRAIN-COMPENSATED InxGa1-xAs/InyAl1-yAs ELECTROABSORPTION MODULATORS WITH HIGH EXTINCTION RATIO AND LOW POLARIZATION-DEPENDENT LOSS

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