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[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

Ultramicroscopy, 2004, Vol.98 (2), p.239-247

2004

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A 0.0014 mm2, 1.18 TΩ Segmented Duty-Cycled Resistor Replacing Pseudo-Resistor for Neural Recording Interface Circuits

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.62-63

2022

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A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.353-356

2020

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A 0.034mm2, 725fs RMS jitter, 1.8%/V frequency-pushing, 10.8-19.3GHz transformer-based fractional-N all-digital PLL in 10nm FinFET CMOS

2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), 2016, p.1-2

2016

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A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

Journal of micromechanics and microengineering, 2014-06, Vol.24 (6), p.65024-7

2014

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A 0.12mm2 K/Ka Band RX Front-end in 40-nm CMOS with Inductor-Less LO Generators

2024 IEEE International Symposium on Circuits and Systems (ISCAS), 2024, p.1-5

2024

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A 0.13um low phase noise and fast locking PLL

2019 IEEE 4th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC), 2019, Vol.1, p.1468-1471

2019

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A 0.18 /spl mu/m CMOS receiver for 3.1 to 10.6GHz MB-OFDM UWB communication systems

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006, p.4 pp.-264

2006

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A 0.18nJ/Matrix QR decomposition and lattice reduction processor for 8×8 MIMO preprocessing

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.161-164

2013

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0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.179-181

2014

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A 0.2-V Three-Winding Transformer-Based DCO in 16-nm FinFET CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2020-12, Vol.67 (12), p.2878-2882

2020

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A 0.22 THz Input/Output Power Coupling System for Sheet Beam Traveling Wave Tubes

2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2022, p.1-2

2022

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A 0.29pJ/Step Fully Discrete-Time Charge Domain Bridge-to-Digital Converter for Force Sensing in Spinal Implants Using RC Bridge

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

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A 0.3-V, −75.8-dBm Temperature-Robust Differential Wake-Up Receiver for WSNs

IEEE sensors journal, 2022-11, Vol.22 (21), p.20593-20602

2022

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0.35-mum SiGe BiCMOS variable-gain power amplifier for WiMAX transmitters

Microwave and optical technology letters, 2007-11, Vol.49 (11), p.2750-2753

2007

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0.35-μm SiGe BiCMOS variable-gain power amplifier for WiMAX transmitters

Microwave and optical technology letters, 2007-11, Vol.49 (11), p.2750-2753

2007

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A 0.3V, -75.8dBm Temperature-Robust Differential Wake-up Receiver for WSNs

IEEE sensors journal, 2022, p.1-1

2022

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A 0.4 V, 6.4 nW, −75 dBm Sensitivity Fully Differential Wake-Up Receiver for WSNs Applications

IEEE transactions on circuits and systems. I, Regular papers, 2022-07, Vol.69 (7), p.2794-2804

2022

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A 0.4 V, - 77.2 dBm WuRX With Digitalized Loop-Calibration and Temperature-Compensation

IEEE transactions on microwave theory and techniques, 2024-06, p.1-10

2024

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A 0.4-V Startup, Dead-Zone-Free, Monolithic Four-Mode Synchronous Buck-Boost Converter

IEEE transactions on very large scale integration (VLSI) systems, 2023-07, Vol.31 (7), p.1-10

2023

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A 0.45/0.2-NEF/PEF 12-nV/√Hz Highly Configurable Discrete-Time Low-Noise Amplifier

IEEE solid-state circuits letters, 2020, Vol.3, p.486-489

2020

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A 0.45V sub-mW all-digital PLL in 16nm FinFET for bluetooth low-energy (BLE) modulation and instantaneous channel hopping using 32.768kHz reference

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.448-450

2018

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A 0.47mW 6th-order 20MHz active filter using highly power-efficient Opamp

2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011, p.1640-1643

2011

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A 0.5-2 GHz high frequency selectivity RF front-end with series N-path filter

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.2217-2220

2015

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A 0.5–3.5GHz wideband CMOS LNA for LTE application

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2016, p.1-2

2016

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[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

A 0.0014 mm2, 1.18 TΩ Segmented Duty-Cycled Resistor Replacing Pseudo-Resistor for Neural Recording Interface Circuits

A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

A 0.034mm2, 725fs RMS jitter, 1.8%/V frequency-pushing, 10.8-19.3GHz transformer-based fractional-N all-digital PLL in 10nm FinFET CMOS

A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

A 0.12mm2 K/Ka Band RX Front-end in 40-nm CMOS with Inductor-Less LO Generators

A 0.13um low phase noise and fast locking PLL

A 0.18 /spl mu/m CMOS receiver for 3.1 to 10.6GHz MB-OFDM UWB communication systems

A 0.18nJ/Matrix QR decomposition and lattice reduction processor for 8×8 MIMO preprocessing

0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

A 0.2-V Three-Winding Transformer-Based DCO in 16-nm FinFET CMOS

A 0.22 THz Input/Output Power Coupling System for Sheet Beam Traveling Wave Tubes

A 0.29pJ/Step Fully Discrete-Time Charge Domain Bridge-to-Digital Converter for Force Sensing in Spinal Implants Using RC Bridge

A 0.3-V, −75.8-dBm Temperature-Robust Differential Wake-Up Receiver for WSNs

0.35-mum SiGe BiCMOS variable-gain power amplifier for WiMAX transmitters

0.35-μm SiGe BiCMOS variable-gain power amplifier for WiMAX transmitters

A 0.3V, -75.8dBm Temperature-Robust Differential Wake-up Receiver for WSNs

A 0.4 V, 6.4 nW, −75 dBm Sensitivity Fully Differential Wake-Up Receiver for WSNs Applications

A 0.4 V, - 77.2 dBm WuRX With Digitalized Loop-Calibration and Temperature-Compensation

A 0.4-V Startup, Dead-Zone-Free, Monolithic Four-Mode Synchronous Buck-Boost Converter

A 0.45/0.2-NEF/PEF 12-nV/√Hz Highly Configurable Discrete-Time Low-Noise Amplifier

A 0.45V sub-mW all-digital PLL in 16nm FinFET for bluetooth low-energy (BLE) modulation and instantaneous channel hopping using 32.768kHz reference

A 0.47mW 6th-order 20MHz active filter using highly power-efficient Opamp

A 0.5-2 GHz high frequency selectivity RF front-end with series N-path filter

A 0.5–3.5GHz wideband CMOS LNA for LTE application

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