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Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

Semiconductor photonics and technology, 2005, Vol.11 (4), p.225-227

LI Cheng LAI Hong-kai CHEN Song-yan

2005

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Ohmic Contact to n-Type Ge With Compositional W Nitride

IEEE electron device letters, 2014-12, Vol.35 (12), p.1188-1190

2014

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Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Chinese physics B, 2014-04, Vol.23 (4), p.655-658

黄诗浩李成卢卫芳王尘林光杨赖虹凯陈松岩

2014

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High-performance germanium n＋/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Chinese physics B, 2016-05, Vol.25 (5), p.312-315

黄巍陆超余珏魏江镔陈超文汪建元徐剑芳王尘李成陈松岩刘春莉赖虹凯

2016

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The optical property of tensile-strained n-type doped Ge

Wuli xuebao, 2012-03, Vol.61 (3), p.36202

2012

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Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Chinese physics B, 2013-10, Vol.22 (10), p.539-543

卢卫芳李成黄诗浩林光杨王尘严光明黄巍赖虹凯陈松岩

2013

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Properties and mechanism analysis of metal/Ge ohmic contact

Wuli xuebao, 2013-08, Vol.62 (16), p.167304

2013

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Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Wuli xuebao, 2013-09, Vol.62 (17), p.177802

2013

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Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Wuli xuebao, 2011-07, Vol.60 (7), p.78102

2011

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Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate

Solid-state electronics, 2008-11, Vol.52 (11), p.1782-1790

2008

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Wet thermal annealing effect on TaN/HfO 2 /Ge metal—oxide—semiconductor capacitors with and without a GeO 2 passivation layer

Chinese physics B, 2012-11, Vol.21 (11), p.117701

2012

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Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Optoelectronics letters, 2011-05, Vol.7 (3), p.175-177

2011

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Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Semiconductor science and technology, 2008-03, Vol.23 (3), p.035011

2008

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Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Chinese physics B, 2008-09, Vol.17 (9), p.3479-3483

2008

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Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Wuli xuebao, 2011-09, Vol.60 (9), p.98108

2011

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Improved performance of Au nanocrystal nonvolatile memory by N 2 -plasma treatment on HfO 2 blocking layer

Chinese physics B, 2018-06, Vol.27 (6), p.67303

2018

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Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant Nos. YKJ16012R and YKJ16016R) and the National Natural Science Foundation of China (Grant No. 51702271)

Chinese physics B, 2018-06, Vol.27 (6)

2018

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Self-compliance Pt/HfO 2 /Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics

Applied physics express, 2016-04, Vol.9 (4), p.41501

2016

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High-performance germanium n super(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Chinese physics B, 2016-05, Vol.25 (5), p.57304-57307

2016

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High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperatureProject supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251)

Chinese physics B, 2016-04, Vol.25 (5)

2016

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Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Wuli xuebao, 2012, Vol.61 (7), p.78104

2012

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Improvement on performance of Si-based Ge PIN photodetector with Al/TaN electrode for n-type Ge contact

Wuli xuebao, 2012, Vol.61 (18), p.186105

2012

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Wet thermal annealing effect on TaN/HfO sub(2)/Ge metal-oxide-semiconductor capacitors with and without a GeO sub(2) passivation layer

Chinese physics B, 2012-11, Vol.21 (11), p.117701-1-117701-7

2012

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Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer

中国物理B：英文版, 2012-11, Vol.21 (11), p.467-473

刘冠洲李成路长宝唐锐钒汤梦饶吴政杨旭黄巍赖虹凯陈松岩

2012

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Energy band design for Si/SiGe quantum cascade laser

Wuli xuebao, 2007, Vol.56 (7), p.4137

2007

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Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

Ohmic Contact to n-Type Ge With Compositional W Nitride

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

High-performance germanium n＋/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

The optical property of tensile-strained n-type doped Ge

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Properties and mechanism analysis of metal/Ge ohmic contact

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate

Wet thermal annealing effect on TaN/HfO 2 /Ge metal—oxide—semiconductor capacitors with and without a GeO 2 passivation layer

Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Improved performance of Au nanocrystal nonvolatile memory by N 2 -plasma treatment on HfO 2 blocking layer

Self-compliance Pt/HfO 2 /Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics

High-performance germanium n super(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Improvement on performance of Si-based Ge PIN photodetector with Al/TaN electrode for n-type Ge contact

Wet thermal annealing effect on TaN/HfO sub(2)/Ge metal-oxide-semiconductor capacitors with and without a GeO sub(2) passivation layer

Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer

Energy band design for Si/SiGe quantum cascade laser

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